Interfacial behaviour of a quantum well electrode/electrolyte: EER spectra of an SQW GaAs/AlxGa1-xAs electrode in HQ+BQ non-aqueous electrolyte
文献类型：期刊论文
| 作者 | Liu Y ; Xiao XR ; Wang RZ ; Li DL ; Zeng YP ; Yang CH ; Sun DZ |
| 刊名 | journal of electroanalytical chemistry
 |
| 出版日期 | 1997 |
| 卷号 | 430期号:1-2页码:91-95 |
| 关键词 | quantum well electrode GaAs stark effect Franz-Keldysh oscillation electrolyte electroreflectance spectroscopy interfacial behaviour LINE-SHAPE PHOTOREFLECTANCE GAAS SPECTROSCOPY STATES HETEROSTRUCTURES SUPERLATTICES MECHANISMS MODEL ELECTROREFLECTANCE SPECTRA |
| ISSN号 | 0022-0728 |
| 通讯作者 | xiao xr,acad sinica,inst photog chem,beijing 100101,peoples r china. |
| 中文摘要 | the quantum-confined stark effect and the franz-keldysh oscillation of a single quantum well (sqw) gaas/alxga1-xas electrode were studied in non-aqueous hydroquinone + benzoquinone solution with electrolyte electroreflectance spectroscopy. by investigation of the relation of the quantum-confined stark effect and the franz-keldysh oscillation with applied external bias, the interfacial behaviour of an sqw electrode was analysed. (c) 1997 elsevier science s.a. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13318]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Y,Xiao XR,Wang RZ,et al. Interfacial behaviour of a quantum well electrode/electrolyte: EER spectra of an SQW GaAs/AlxGa1-xAs electrode in HQ+BQ non-aqueous electrolyte[J]. journal of electroanalytical chemistry,1997,430(1-2):91-95. |
| APA | Liu Y.,Xiao XR.,Wang RZ.,Li DL.,Zeng YP.,...&Sun DZ.(1997).Interfacial behaviour of a quantum well electrode/electrolyte: EER spectra of an SQW GaAs/AlxGa1-xAs electrode in HQ+BQ non-aqueous electrolyte.journal of electroanalytical chemistry,430(1-2),91-95. |
| MLA | Liu Y,et al."Interfacial behaviour of a quantum well electrode/electrolyte: EER spectra of an SQW GaAs/AlxGa1-xAs electrode in HQ+BQ non-aqueous electrolyte".journal of electroanalytical chemistry 430.1-2(1997):91-95. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。