The third subband population in modulation-doped InGaAs/InAlAs heterostructures
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 1997 |
| 卷号 | 82期号:12页码:6107-6109 |
| 关键词 | MULTIPLE-QUANTUM WELLS PHOTOLUMINESCENCE SPECTROSCOPY TRANSISTOR STRUCTURES ELECTRON TEMPERATURE DENSITY |
| ISSN号 | 0021-8979 |
| 通讯作者 | li hx,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 10083,peoples r china. |
| 中文摘要 | we have observed the population of the third (n=3) two-dimensional electron subband of ingaas/ inalas modulation-doped structures with very dense sheet carrier density by means of fourier transform photoluminescence (pl). three well-resolved pl peaks centered at 0.737, 0.908, and 0.980 ev are observed, which are attributed to the recombination transitions from the lowest three electron subbands to the n=1 heavy-hole subband. the subband separations clearly exhibit the features of the stepped quantum well with triangle and square potential, consistent with numerical calculation. thanks to the presence of the fermi cutoff, the population ratio of these three subbands can be estimated. temperature and excitation intensity dependence of the quantum well luminescence intensity is also analyzed. (c) 1997 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13322]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. The third subband population in modulation-doped InGaAs/InAlAs heterostructures[J]. journal of applied physics,1997,82(12):6107-6109. |
| APA | Xu B.(1997).The third subband population in modulation-doped InGaAs/InAlAs heterostructures.journal of applied physics,82(12),6107-6109. |
| MLA | Xu B."The third subband population in modulation-doped InGaAs/InAlAs heterostructures".journal of applied physics 82.12(1997):6107-6109. |
入库方式： OAI收割
来源：半导体研究所
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