Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing
文献类型：会议论文
| 作者 | Li GK ; Liu J
|
| 出版日期 | 2008 |
| 会议名称 | 2nd ieee international nanoelectronics conference |
| 会议日期 | mar 24-27, 2008 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | V2O5 THIN-FILMS |
| 页码 | vols 1-3: 857-859 |
| 通讯作者 | wang, xd, chinese acad sci, inst semicond, engn res ctr semicond integrated technol, beijing 100083, peoples r china. |
| 中文摘要 | vox thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. semiconductor-metal phase transition is observed for the film annealed at 400 degrees c for 2 hours. the film also shows a polycrystal structure with grain size from 50nm to 150nm. the vox thin films fabricated by this process have a tcr up to -2.7% at room temperature. our results indicate a promising fabrication method of the nano-structured vox film with relatively high tcr and semiconductor-metal phase transition. |
| 英文摘要 | vox thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. semiconductor-metal phase transition is observed for the film annealed at 400 degrees c for 2 hours. the film also shows a polycrystal structure with grain size from 50nm to 150nm. the vox thin films fabricated by this process have a tcr up to -2.7% at room temperature. our results indicate a promising fabrication method of the nano-structured vox film with relatively high tcr and semiconductor-metal phase transition.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee.; [wang, xiaodong; ji, an; yang, fuhua] chinese acad sci, inst semicond, engn res ctr semicond integrated technol, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | ieee. |
| 会议录 | 2008 2nd ieee international nanoelectronics conference
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 微电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-1572-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7754]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li GK,Liu J. Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing[C]. 见:2nd ieee international nanoelectronics conference. shanghai, peoples r china. mar 24-27, 2008. |
入库方式： OAI收割
来源：半导体研究所
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