AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
文献类型：会议论文
| 作者 | Tang, J ; Wang, XL ; Xiao, HL ; Ran, JX ; Wang, CM ; Wang, XY ; Hu, GX ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | 34th international symposium on compound semiconductors |
| 会议日期 | oct 15-18, 2007 |
| 会议地点 | kyoto, japan |
| 关键词 | PERFORMANCE HETEROSTRUCTURES OPTIMIZATION MOBILITY |
| 页码 | vol 5,no 9,5 (9): 2982-2984 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, novel mat lab, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | a novel algan/gan/gan/gan double heterojunction high electron mobility transistors (dh-hemts) structure with an aln interlayer on sapphire substrate has been grown by mocvd. the structure featured a 6-10 nm in0.1ga0.9n layer inserted between the gan channel and gan buffer. and wer also inserted one ultrathin. aln interlayer into the al/gan/gan interface, which significantly enhanced the mobility of two-dimensional electron gas (2deg) existed in the gan channel. afm result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (rms) of 0.196 nm for a scan area of 5 mu m x 5 mu m. temperature dependent hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/vs at room temperature (rt) was obtained. the sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 omega/sq was achieved. the mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim. |
| 英文摘要 | a novel algan/gan/gan/gan double heterojunction high electron mobility transistors (dh-hemts) structure with an aln interlayer on sapphire substrate has been grown by mocvd. the structure featured a 6-10 nm in0.1ga0.9n layer inserted between the gan channel and gan buffer. and wer also inserted one ultrathin. aln interlayer into the al/gan/gan interface, which significantly enhanced the mobility of two-dimensional electron gas (2deg) existed in the gan channel. afm result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (rms) of 0.196 nm for a scan area of 5 mu m x 5 mu m. temperature dependent hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/vs at room temperature (rt) was obtained. the sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 omega/sq was achieved. the mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 wiley-vch verlag gmbh & co. kgaa, weinheim.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:52z (gmt). no. of bitstreams: 1 655.pdf: 228313 bytes, checksum: a1fb93a55e8391e8d59de5f7fcba4d66 (md5) previous issue date: 2008; [tang, jian; wang, xiaoliang; xiao, hongling; ran, junxue; wang, cuimei; wang, xiaoyan; hu, guoxin; li, jinmin] chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | physica status solidi c - current topics in solid state physics
 |
| 会议录出版者 | wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany |
| 学科主题 | 半导体材料 |
| 会议录出版地 | pappelallee 3, w-69469 weinheim, germany |
| 语种 | 英语 |
| ISSN号 | 1610-1634 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7766]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tang, J,Wang, XL,Xiao, HL,et al. AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD[C]. 见:34th international symposium on compound semiconductors. kyoto, japan. oct 15-18, 2007. |
入库方式： OAI收割
来源：半导体研究所
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