Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test
文献类型：会议论文
| 作者 | Zhou, W ; Yang, JL ; Li, Y ; Yang, FH |
| 出版日期 | 2008 |
| 会议名称 | 3rd ieee international conference of nano/micro engineered and molecular systems |
| 会议日期 | jan 06-09, 2008 |
| 会议地点 | sanya, peoples r china |
| 关键词 | bulge test fracture property silicon nitride Weibull distribution function |
| 页码 | vols 1-3: 253-256 |
| 通讯作者 | yang, jl, chinese acad sci, inst semicond, beijing 100864, peoples r china. |
| 中文摘要 | bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of pecvd silicon nitride (sinx) thin films. plane-strain modulus e-ps prestress s(0), and fracture strength s(max) of sinx thin films deposited both on bare si substrate and on sio2-topped si substrate were extracted. the sinx thin films on different substrates possess similar values of e-ps and s(0) but quite different values of s(max). the statistical analysis of fracture strengths were performed by weibull distribution function and the fracture origins were further predicted. |
| 英文摘要 | bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of pecvd silicon nitride (sinx) thin films. plane-strain modulus e-ps prestress s(0), and fracture strength s(max) of sinx thin films deposited both on bare si substrate and on sio2-topped si substrate were extracted. the sinx thin films on different substrates possess similar values of e-ps and s(0) but quite different values of s(max). the statistical analysis of fracture strengths were performed by weibull distribution function and the fracture origins were further predicted.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:52z (gmt). no. of bitstreams: 1 658.pdf: 274269 bytes, checksum: 05f2cdc1d7fd9796eed2df6740c161aa (md5) previous issue date: 2008; ieee.; state key lab multi spectral informat proc technol.; chinese soc micro nano technol.; ctr micro & nano syst.; ieee nanotechnol council.; shenyang inst automat.; univ california.; ucla, ctr cell control.; global engn technol inst.; nanosurf ag, smart instruments nanosci & nanotechnol.; us army int technol ctr, pacific.; [zhou, wei; yang, jinling; li, yan; yang, fuhua] chinese acad sci, inst semicond, beijing 100864, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ieee.; state key lab multi spectral informat proc technol.; chinese soc micro nano technol.; ctr micro & nano syst.; ieee nanotechnol council.; shenyang inst automat.; univ california.; ucla, ctr cell control.; global engn technol inst.; nanosurf ag, smart instruments nanosci & nanotechnol.; us army int technol ctr, pacific. |
| 会议录 | 2008 3rd ieee international conference on nano/micro engineered and molecular systems
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 微电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-1907-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7770]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, W,Yang, JL,Li, Y,et al. Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test[C]. 见:3rd ieee international conference of nano/micro engineered and molecular systems. sanya, peoples r china. jan 06-09, 2008. |
入库方式： OAI收割
来源：半导体研究所
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