Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes
文献类型：会议论文
| 作者 | Zhou, W ; Yang, JL ; Sun, GS ; Liu, XF ; Yang, FH ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | 3rd ieee international conference of nano/micro engineered and molecular systems |
| 会议日期 | jan 06-09, 2008 |
| 会议地点 | sanya, peoples r china |
| 关键词 | bulge test fracture property silicon carbide thin films Weibull distribution function |
| 页码 | vols 1-3: 530-533 |
| 通讯作者 | zhou, w, cas, inst semicond, beijing 100864, peoples r china. |
| 中文摘要 | the mechanical properties and fracture behavior of silicon carbide (3c-sic) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. plane-strain modulus e-ps, prestress so, and fracture strength s(max) for 3c-sic thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. the e, values of sic are strongly dependent on grain orientation. the thicker sic film presents lower so than the thinner film due to stress relaxation. the s(max) values decrease with increasing film thickness. the statistical analysis of the fracture strength data were achieved by weibull distribution function and the fracture origins were predicted. |
| 英文摘要 | the mechanical properties and fracture behavior of silicon carbide (3c-sic) thin films grown on silicon substrates were characterized using bulge testing combined with a refined load-deflection model for long rectangular membranes. plane-strain modulus e-ps, prestress so, and fracture strength s(max) for 3c-sic thin films with thickness of 0.40 mu m and 1.42 mu m were extracted. the e, values of sic are strongly dependent on grain orientation. the thicker sic film presents lower so than the thinner film due to stress relaxation. the s(max) values decrease with increasing film thickness. the statistical analysis of the fracture strength data were achieved by weibull distribution function and the fracture origins were predicted.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:52z (gmt). no. of bitstreams: 1 659.pdf: 524001 bytes, checksum: 715015eac2a88fb6dc74606361f74d5e (md5) previous issue date: 2008; ieee.; state key lab multi spectral informat proc technol.; chinese soc micro nano technol.; ctr micro & nano syst.; ieee nanotechnol council.; shenyang inst automat.; univ california.; ucla, ctr cell control.; global engn technol inst.; nanosurf ag, smart instruments nanosci & nanotechnol.; us army int technol ctr, pacific.; [zhou, wei; yang, jinling; sun, guosheng; liu, xingfang; yang, fuhua; li, jinmin] cas, inst semicond, beijing 100864, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ieee.; state key lab multi spectral informat proc technol.; chinese soc micro nano technol.; ctr micro & nano syst.; ieee nanotechnol council.; shenyang inst automat.; univ california.; ucla, ctr cell control.; global engn technol inst.; nanosurf ag, smart instruments nanosci & nanotechnol.; us army int technol ctr, pacific. |
| 会议录 | 2008 3rd ieee international conference on nano/micro engineered and molecular systems
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-1907-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7772]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, W,Yang, JL,Sun, GS,et al. Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes[C]. 见:3rd ieee international conference of nano/micro engineered and molecular systems. sanya, peoples r china. jan 06-09, 2008. |
入库方式： OAI收割
来源：半导体研究所
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