Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G
文献类型：会议论文
| 作者 | Chen P
|
| 出版日期 | 2008 |
| 会议名称 | 6th international conference on thin film physics and applications |
| 会议日期 | sep 25-28, 2007 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | pockels effect |
| 页码 | 6984: g9841-g9841 |
| 通讯作者 | chen, p, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 中文摘要 | the linear electro-optic (pockels) effect of wurtzite gallium nitride (gan) films and six-period gan/alxga1-xn superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical mach-zehnder interferometer system with an incident light wavelength of 1.55 mu m. the samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (mocvd). the measured coefficients of the gan/alxga1-xn superlattices are much larger than those of bulk material. taking advantage of the strong field localization due to resonances, gan/alxga1-xn sl can be proposed to engineer the nonlinear responses. |
| 英文摘要 | the linear electro-optic (pockels) effect of wurtzite gallium nitride (gan) films and six-period gan/alxga1-xn superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical mach-zehnder interferometer system with an incident light wavelength of 1.55 mu m. the samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (mocvd). the measured coefficients of the gan/alxga1-xn superlattices are much larger than those of bulk material. taking advantage of the strong field localization due to resonances, gan/alxga1-xn sl can be proposed to engineer the nonlinear responses.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; shanghai jiao tong univ, dept phys.; natl nat sci fdn china.; chinese phys soc.; shanghai phys soc.; spie.; [chen, p.; lib, s. p.; tu, x. g.; zuo, y. h.; zhao, l.; chen, s. w.; yu, y. d.; yu, j. z.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | shanghai jiao tong univ, dept phys.; natl nat sci fdn china.; chinese phys soc.; shanghai phys soc.; spie. |
| 会议录 | thin film physics and applications,sixth international conference
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7182-6 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7784]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen P. Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G[C]. 见:6th international conference on thin film physics and applications. shanghai, peoples r china. sep 25-28, 2007. |
入库方式： OAI收割
来源：半导体研究所
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