Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P
文献类型：会议论文
| 作者 | Sun, MX ; Tan, MQ ; Zhao, M |
| 出版日期 | 2008 |
| 会议名称 | 6th international conference on thin film physics and applications |
| 会议日期 | sep 25-28, 2007 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | antireflective coatings superluminescent diodes double source electron beam evaporation technology |
| 页码 | 6984: p9842-p9842 |
| 通讯作者 | sun, mx, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 中文摘要 | we introduce a double source electron beam evaporation (dsebet) technique in this paper. the refractive index coatings were fabricated on k9 glass substrate by adjusting the evaporation rates of two independent sources. the coatings, which were described by atomic force microscopy (afm), show good compactness and homogeneity. the antireflective (ar) coatings were fabricated on superluminescent diodes (sld) by dsebet. the hybrid ar coatings on the facets of sld were prepared in evaporation rates of 0.22nm/s and 0.75nm/s for silicon and silicon dioxide, respectively. the results of afm and spectral performance of coated sld show that dsebet has a promising future in preparing the coatings on optoelectronic devices. |
| 英文摘要 | we introduce a double source electron beam evaporation (dsebet) technique in this paper. the refractive index coatings were fabricated on k9 glass substrate by adjusting the evaporation rates of two independent sources. the coatings, which were described by atomic force microscopy (afm), show good compactness and homogeneity. the antireflective (ar) coatings were fabricated on superluminescent diodes (sld) by dsebet. the hybrid ar coatings on the facets of sld were prepared in evaporation rates of 0.22nm/s and 0.75nm/s for silicon and silicon dioxide, respectively. the results of afm and spectral performance of coated sld show that dsebet has a promising future in preparing the coatings on optoelectronic devices.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:53z (gmt). no. of bitstreams: 1 672.pdf: 333946 bytes, checksum: c5513a59f6a14fe768175e8318e9ae9a (md5) previous issue date: 2008; shanghai jiao tong univ, dept phys.; natl nat sci fdn china.; chinese phys soc.; shanghai phys soc.; spie.; [sun, m. x.; tan, m. q.; zhao, m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | shanghai jiao tong univ, dept phys.; natl nat sci fdn china.; chinese phys soc.; shanghai phys soc.; spie. |
| 会议录 | thin film physics and applications,sixth international conference
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7182-6 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7786]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, MX,Tan, MQ,Zhao, M. Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P[C]. 见:6th international conference on thin film physics and applications. shanghai, peoples r china. sep 25-28, 2007. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。