High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
文献类型：会议论文
| 作者 | Yan, FW ; Gao, HY ; Zhang, Y ; Li, JM ; Zeng, YP ; Wang, GH ; Yang, FH |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | GaN MOCVD LED nano-pattern SEM HRXRD PL |
| 页码 | 6841: 84103-84103 |
| 通讯作者 | yan, fw, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china. |
| 中文摘要 | nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (leds) growths. it is expected that the strain induced by the lattice misfits between the gan epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. the gan epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (mocvd) are characterized by means of scanning electron microscopy (sem), high-resolution x-ray diffraction (hrxrd) and photoluminescence (pl) techniques. in comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the ingan/gan blue leds grown on the nano-patterned sapphire substrates. |
| 英文摘要 | nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (leds) growths. it is expected that the strain induced by the lattice misfits between the gan epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. the gan epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (mocvd) are characterized by means of scanning electron microscopy (sem), high-resolution x-ray diffraction (hrxrd) and photoluminescence (pl) techniques. in comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the ingan/gan blue leds grown on the nano-patterned sapphire substrates.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:55z (gmt). no. of bitstreams: 1 685.pdf: 1787932 bytes, checksum: 5458c78dc5a742f74de4f9b830ac863e (md5) previous issue date: 2008; spie.; chinese opt soc.; [yan, fawang; gao, haiyong; zhang, yang; li, jinmin; zeng, yiping; wang, guohong; yang, fuhua] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7810]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yan, FW,Gao, HY,Zhang, Y,et al. High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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