The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
文献类型：会议论文
| 作者 | Wei, TB ; Duan, RF ; Wang, JX ; Li, JM ; Huo, ZQ ; Zeng, YP |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | HVPE GaN nitridation polarity etching |
| 页码 | 6841: 84105-84105 |
| 通讯作者 | wei, tb, chinese acad sci, inst semicond, res & dev ctr semicond lighting technol, beijing 100083, peoples r china. |
| 中文摘要 | thick gan films were grown on sapphire in a home-made vertical hvpe reactor. effect of nucleation treatments on the properties of gan films was investigated, including the nitridation of sapphire, low temperature gan buffer and mocvd-template. various material characterization techniques, including afm, sem, xrd, cl and pl have been used to assess these gan epitaxial films. it was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. in addition, smooth ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. this may be caused by the atoms re-arrangement because of oxidation. the roughness of n-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. the low temperature gan buffer gown at 650 degrees c is favorable for subsequent epitaxial film, which had narrow fwhm of 307 arcsec. the epitaxial growth on mocvd-template directly came into quasi-2d growth mode due to enough nucleation centers, and high quality gan films were acquired with the values of the fwhm of 141 arcsec for (002) reflections. after etching in boiled koh, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. the photoluminescence spectrum of gan film on the mocvd-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes. |
| 英文摘要 | thick gan films were grown on sapphire in a home-made vertical hvpe reactor. effect of nucleation treatments on the properties of gan films was investigated, including the nitridation of sapphire, low temperature gan buffer and mocvd-template. various material characterization techniques, including afm, sem, xrd, cl and pl have been used to assess these gan epitaxial films. it was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. in addition, smooth ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. this may be caused by the atoms re-arrangement because of oxidation. the roughness of n-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. the low temperature gan buffer gown at 650 degrees c is favorable for subsequent epitaxial film, which had narrow fwhm of 307 arcsec. the epitaxial growth on mocvd-template directly came into quasi-2d growth mode due to enough nucleation centers, and high quality gan films were acquired with the values of the fwhm of 141 arcsec for (002) reflections. after etching in boiled koh, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. the photoluminescence spectrum of gan film on the mocvd-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:55z (gmt). no. of bitstreams: 1 686.pdf: 977420 bytes, checksum: 17c601dc095766864c9655ba2a6d3461 (md5) previous issue date: 2008; spie.; chinese opt soc.; [wei tongbo; duan ruifei; wang junxi; li jinmin; huo ziqiang; zeng yiping] chinese acad sci, inst semicond, res & dev ctr semicond lighting technol, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7812]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wei, TB,Duan, RF,Wang, JX,et al. The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。