Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107
文献类型：会议论文
| 作者 | Gao, HY ; Yan, FW ; Zhang, Y ; Li, JM ; Zeng, YP ; Wang, GH ; Yang, FH |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | pyramidal patterned substrate InGaN/GaN light-emitting diode wet etching |
| 页码 | 6841: 84107-84107 |
| 通讯作者 | gao, hy, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, a35 qinghua e rd, beijing 100083, peoples r china. |
| 中文摘要 | an effective approach to enhance the light output power of ingan/gan light emitting diodes (led) was proposed using pyramidal patterned sapphire substrates (pss). the sapphire substrates were patterned by a selective chemical wet etching technique. gan-based leds were fabricated on patterned sapphire substrates through metal organic chemical deposition (mocvd). the leds fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional leds fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. the light output power of the leds fabricated on patterned sapphire substrates was about 37% higher than that of leds on planar sapphire substrates at an injection current of 20 ma. the significant enhancement is attributable to the improvement of the quality of gan-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates. |
| 英文摘要 | an effective approach to enhance the light output power of ingan/gan light emitting diodes (led) was proposed using pyramidal patterned sapphire substrates (pss). the sapphire substrates were patterned by a selective chemical wet etching technique. gan-based leds were fabricated on patterned sapphire substrates through metal organic chemical deposition (mocvd). the leds fabricated on patterned sapphire substrates exhibit excellent device performance compared to the conventional leds fabricated on planar sapphire substrates in the case of the same growth and device fabricating conditions. the light output power of the leds fabricated on patterned sapphire substrates was about 37% higher than that of leds on planar sapphire substrates at an injection current of 20 ma. the significant enhancement is attributable to the improvement of the quality of gan-based epilayers and improvement of the light extraction efficiency by patterned sapphire substrates.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:55z (gmt). no. of bitstreams: 1 687.pdf: 771884 bytes, checksum: 493472d5bb46d3bde77a8b6ee2185f4e (md5) previous issue date: 2008; spie.; chinese opt soc.; [gao, haiyong; yan, fawang; zhang, yang; li, jinmin; zeng, yiping; wang, guohong; yang, fuhua] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7814]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao, HY,Yan, FW,Zhang, Y,et al. Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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