Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108
文献类型：会议论文
| 作者 | Fan, JM ; Wang, LC ; Guo, JX ; Yi, XY ; Liu, ZQ ; Wang, GH ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | GaN-based LED Micro-LEDs light extraction efficiency ray tracing flip-chip |
| 页码 | 6841: 84108-84108 |
| 通讯作者 | fan, jm, chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china. |
| 中文摘要 | the structure of micro-leds was optimized designed. optical, electrical and thermal characteristics of micro-leds were improved. the optimized design make micro-leds suitable for high-power device. the light extraction efficiency of micro-leds was analyzed by the means of ray tracing. the results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-leds. furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. the high-power flip-chip micro-leds were fabricated, which has higher quantum efficiency than conventional baled's. when the number of microstructure in micro-leds was increased by 57%, the light output power was enhanced 24%. light output power is 82.88mw at the current of 350ma and saturation current is up to 800ma, all of these are better than baled which was fabricated in the same epitaxial wafer. the in characteristics of micro-leds are almost identical to baled. |
| 英文摘要 | the structure of micro-leds was optimized designed. optical, electrical and thermal characteristics of micro-leds were improved. the optimized design make micro-leds suitable for high-power device. the light extraction efficiency of micro-leds was analyzed by the means of ray tracing. the results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-leds. furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. the high-power flip-chip micro-leds were fabricated, which has higher quantum efficiency than conventional baled's. when the number of microstructure in micro-leds was increased by 57%, the light output power was enhanced 24%. light output power is 82.88mw at the current of 350ma and saturation current is up to 800ma, all of these are better than baled which was fabricated in the same epitaxial wafer. the in characteristics of micro-leds are almost identical to baled.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:55z (gmt). no. of bitstreams: 1 688.pdf: 553530 bytes, checksum: 4612fe4eff7f5d79bb91f0f76193a165 (md5) previous issue date: 2008; spie.; chinese opt soc.; [fan, jingmei; wang, liangchen; guo, jinxia; yi, xiaoyan; liu, zhiqiang; wang, guohong; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7816]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fan, JM,Wang, LC,Guo, JX,et al. Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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