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Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J

文献类型：会议论文

作者Hu HY ; Lu L ; Du W ; Liu HW ; Kan Q ; Wang CX ; Xu XS ; Chen HD
出版日期2008
会议名称conference on solid state lighting and solar energy technologies
会议日期nov 12-14, 2007
会议地点beijing, peoples r china
关键词GaN
页码6841: j8410-j8410
通讯作者hu, hy, chinese acad sci, inst semicond, beijing 100864, peoples r china.
中文摘要for enhancing the output efficiency of gan light-emitting diode(led), we calculated the band structure of photonic crystal(phc), and designed and fabricated several novel gan leds with photonic crystal on indium-tin-oxide(ito), which as p-type transparent contact of gan led. in this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. and we have done some preliminary experiments and obtained some results.
英文摘要for enhancing the output efficiency of gan light-emitting diode(led), we calculated the band structure of photonic crystal(phc), and designed and fabricated several novel gan leds with photonic crystal on indium-tin-oxide(ito), which as p-type transparent contact of gan led. in this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. and we have done some preliminary experiments and obtained some results.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; spie.; chinese opt soc.; [hu, haiyang; lu, lin; du, wei; liu, hongwei; kan, qiang; wang, chunxia; xu, xingsheng; chen, hongda] chinese acad sci, inst semicond, beijing 100864, peoples r china
收录类别其他
会议主办者spie.; chinese opt soc.
会议录solid state lighting and solar energy technologies
会议录出版者spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题光电子学
会议录出版地1000 20th st, po box 10, bellingham, wa 98227-0010 usa
语种英语
ISSN号0277-786x
ISBN号978-0-8194-7016-4
源URL[http://ir.semi.ac.cn/handle/172111/7824]  
专题半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式
GB/T 7714		 Hu HY,Lu L,Du W,et al. Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007.

入库方式： OAI收割

来源：半导体研究所

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