Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
文献类型：会议论文
| 作者 | Yan, JC ; Wang, JX ; Liu, NX ; Liu, Z ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | AlGaN GaN template A1N interlayer MOCVD crack interference fringes |
| 页码 | 6841: k8410-k8410 |
| 通讯作者 | yan, jc, chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china. |
| 中文摘要 | alxga1-xn layer was grown on sapphire substrate with gan template by metal organic chemical vapor deposition system (mocvd). high temperature a1n (ht-a1n) interlayer was inserted between alxga1-xn layer and gan template to solve the cracking problem that often appears on alxga1-xn surface when directly grown on high temperature gan template. optical microscope, scanning electron microscopy (sem), atomic force microscope (afm), high resolution x-ray diffraction (hrxrd) and cathodoluminescence (cl) were used for characterization. it was found that the cracking was successfully eliminated. furthermore, the crystalline quality of alxga1-xn layer with ht-a1n interlayer was much improved. interference fringes were found in the hrxrd images. cl test showed that yellow emission was much reduced for algan layer with ht-a1n interlayer. |
| 英文摘要 | alxga1-xn layer was grown on sapphire substrate with gan template by metal organic chemical vapor deposition system (mocvd). high temperature a1n (ht-a1n) interlayer was inserted between alxga1-xn layer and gan template to solve the cracking problem that often appears on alxga1-xn surface when directly grown on high temperature gan template. optical microscope, scanning electron microscopy (sem), atomic force microscope (afm), high resolution x-ray diffraction (hrxrd) and cathodoluminescence (cl) were used for characterization. it was found that the cracking was successfully eliminated. furthermore, the crystalline quality of alxga1-xn layer with ht-a1n interlayer was much improved. interference fringes were found in the hrxrd images. cl test showed that yellow emission was much reduced for algan layer with ht-a1n interlayer.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:56z (gmt). no. of bitstreams: 1 693.pdf: 482653 bytes, checksum: 9f388021429de0b96a8304e40155a22d (md5) previous issue date: 2008; spie.; chinese opt soc.; [yan, jianchang; wang, junxi; liu, naixin; liu, zhe; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7826]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yan, JC,Wang, JX,Liu, NX,et al. Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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