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The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M
文献类型：会议论文
| 作者 | Yang, H ; Chen, Y ; Wang, LB ; Yi, XY ; Fan, JM ; Liu, ZQ ; Yang, FH ; Wang, LC ; Wang, GH ; Zeng, YP ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | GaN-based LED grinding ray tracing |
| 页码 | 6841: m8410-m8410 |
| 通讯作者 | yang, h, chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china. |
| 中文摘要 | we investigate the relation between the thickness of sapphire substrates and the extraction efficiency of led. the increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. but the output power increasing is inconspicuous when the thickness is more than 200um. the structure on bottom face of sapphire substrates can enhance the extraction efficiency of gan-based led, too. the difference of output power between the flip-chip led with smooth bottom surface and the led with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. but for those leds grown on patterned sapphire substrate the difference is only about 10%. another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched leds is improved about 50% than a common. case. |
| 英文摘要 | we investigate the relation between the thickness of sapphire substrates and the extraction efficiency of led. the increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. but the output power increasing is inconspicuous when the thickness is more than 200um. the structure on bottom face of sapphire substrates can enhance the extraction efficiency of gan-based led, too. the difference of output power between the flip-chip led with smooth bottom surface and the led with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. but for those leds grown on patterned sapphire substrate the difference is only about 10%. another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched leds is improved about 50% than a common. case.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:56z (gmt). no. of bitstreams: 1 694.pdf: 304471 bytes, checksum: 9d5de3e6760e7604dea124815fba0e8e (md5) previous issue date: 2008; spie.; chinese opt soc.; [yang, hua; chen, yu; wang, libin; yi, xiaoyan; fan, jingmei; liu, zhiqiang; yang, fuhua; wang, liangchen; wang, guohong; zeng, yiping; li, jinmin] chinese acad sci, inst semicond, r&d ctr semicond lighting, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7828]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang, H,Chen, Y,Wang, LB,et al. The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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