AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
文献类型：会议论文
| 作者 | Liu, NX ; Yan, JC ; Liu, Z ; Ma, P ; Wang, JX ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | AlGaN HT-AlGaN buffer HT-interlayers ultraviolet (UV) LED |
| 页码 | 6841: s8410-s8410 |
| 通讯作者 | liu, nx, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | we investigated algan layers grown by metalorganic chemical vapor deposition (mocvd) on high temperature (ht-)gan and algan buffer layers. on gan buffer layer, there are a lot of surface cracking because of tensile strain in subsequent algan epilayers. on ht-algan buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in ht-algan growth process.the insertion of interlayer (il) between algan and the gan pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved al incorporation efficiency and lead to phase-separation. and we also found the growth temperature of il is a critical parameter for crystalline quality of subsequent algan epilayer. low temperature (lt-) a1n il lead to a inferior quality in subsequent algan epilayers. |
| 英文摘要 | we investigated algan layers grown by metalorganic chemical vapor deposition (mocvd) on high temperature (ht-)gan and algan buffer layers. on gan buffer layer, there are a lot of surface cracking because of tensile strain in subsequent algan epilayers. on ht-algan buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in ht-algan growth process.the insertion of interlayer (il) between algan and the gan pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved al incorporation efficiency and lead to phase-separation. and we also found the growth temperature of il is a critical parameter for crystalline quality of subsequent algan epilayer. low temperature (lt-) a1n il lead to a inferior quality in subsequent algan epilayers.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:56z (gmt). no. of bitstreams: 1 695.pdf: 379877 bytes, checksum: 4bc01a4bc1d2c986a1e8cb4661c2aff3 (md5) previous issue date: 2008; spie.; chinese opt soc.; [liu, n. x.; yan, j. c.; liu, z.; ma, p.; wang, j. x.; li, j. m.] chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7830]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, NX,Yan, JC,Liu, Z,et al. AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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