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High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
文献类型：会议论文
| 作者 | Zhang, Y ; Yan, FW ; Gao, HY ; Li, JM ; Zeng, YP ; Wang, GH ; Yang, FH |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | GaN nitrides LED MOCVD patterned sapphire substrate wet etching |
| 页码 | 6841: t8410-t8410 |
| 通讯作者 | zhang, y, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china. |
| 中文摘要 | patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. in this article, a wet-etching method for sapphire substrate is developed. the effect of substrate surface topographies on the quality of the gan epilayers and corresponding device performance are investigated. the gan epilayers grown on the wet-patterned sapphire substrates by mocvd are characterized by means of scanning electrical microscopy (sem), atomic force microscopy (afm), high-resolution x-ray diffraction (hrxrd), and photoluminescence (pl) techniques. in comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mw@20ma is measured for the ingan/gan blue leds grown on the wet-patterned sapphire substrate. |
| 英文摘要 | patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. in this article, a wet-etching method for sapphire substrate is developed. the effect of substrate surface topographies on the quality of the gan epilayers and corresponding device performance are investigated. the gan epilayers grown on the wet-patterned sapphire substrates by mocvd are characterized by means of scanning electrical microscopy (sem), atomic force microscopy (afm), high-resolution x-ray diffraction (hrxrd), and photoluminescence (pl) techniques. in comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mw@20ma is measured for the ingan/gan blue leds grown on the wet-patterned sapphire substrate.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:56z (gmt). no. of bitstreams: 1 696.pdf: 952085 bytes, checksum: a2225e70004d133ec0b6081adc8516d9 (md5) previous issue date: 2008; spie.; chinese opt soc.; [zhang, yang; yan, fawang; gao, haiyong; li, jinmin; zeng, yiping; wang, guohong; yang, fuhua] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7832]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, Y,Yan, FW,Gao, HY,et al. High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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