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Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X
文献类型：会议论文
| 作者 | Li, Y ; Yi, XY ; Wang, XD ; Guo, JX ; Wang, LC ; Wang, GH ; Yang, FH ; Zeng, YP ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | GaN LED plasma damage etch ICP PECVD |
| 页码 | 6841: x8410-x8410 |
| 通讯作者 | li, y, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | the effects of plasma induced damage in different conditions of icp and pecvd processes on leds were presented. for icp mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type gan, a photoluminescence (pl) measurement was investigated with different rf chuck power. it was founded the pl intensity of the peak decreased with increasing dc bias and the intensity of sample etched at a higher dc bias of -400v is less by two orders of magnitude than that of the as-grown sample. meanwhile, in the in curve for the etched samples with different dc biases, the reverse leakage current of higher dc bias sample was obviously degraded than the lower one. in addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by pecvd. the pl intensity of samples deposited with different powers sharply decreased when the power was excessive. the pl spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. a two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power. |
| 英文摘要 | the effects of plasma induced damage in different conditions of icp and pecvd processes on leds were presented. for icp mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type gan, a photoluminescence (pl) measurement was investigated with different rf chuck power. it was founded the pl intensity of the peak decreased with increasing dc bias and the intensity of sample etched at a higher dc bias of -400v is less by two orders of magnitude than that of the as-grown sample. meanwhile, in the in curve for the etched samples with different dc biases, the reverse leakage current of higher dc bias sample was obviously degraded than the lower one. in addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by pecvd. the pl intensity of samples deposited with different powers sharply decreased when the power was excessive. the pl spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. a two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:57z (gmt). no. of bitstreams: 1 697.pdf: 718357 bytes, checksum: b8337c0bb7ec16cf8507fd03677f96ce (md5) previous issue date: 2008; spie.; chinese opt soc.; [li, yan; yi, xiaoyan; wang, xiaodong; guo, jinxia; yang, fuhua; li, jinmin] chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7834]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li, Y,Yi, XY,Wang, XD,et al. Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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