Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E
文献类型：会议论文
| 作者 | Yin ZG ; Zhang XW
|
| 出版日期 | 2008 |
| 会议名称 | conference on solid state lighting and solar energy technologies |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | thermophotovoltaic cell |
| 页码 | 6841: e8411-e8411 |
| 通讯作者 | liu, l, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | gasb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. in this paper, undoped and doped gasb layers were grown on n-gasb (100) substrates from both ga-rich and sb-rich solutions using liquid phase epitaxy (lpe) technique. the nominal segregation coefficients k of intentional doped zn were 1.4 and 8.8 determined from the two kinds of gasb epitaxial layers. additionally, compared with growing from ga-rich solutions, the growing processes from sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. further-more, in order to broaden the absorbing edge, ga1-xinxasysb1-y quaternary alloys were grown on both gasb and inas substrates from in-rich solutions, under different temperature respectively. |
| 英文摘要 | gasb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. in this paper, undoped and doped gasb layers were grown on n-gasb (100) substrates from both ga-rich and sb-rich solutions using liquid phase epitaxy (lpe) technique. the nominal segregation coefficients k of intentional doped zn were 1.4 and 8.8 determined from the two kinds of gasb epitaxial layers. additionally, compared with growing from ga-rich solutions, the growing processes from sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. further-more, in order to broaden the absorbing edge, ga1-xinxasysb1-y quaternary alloys were grown on both gasb and inas substrates from in-rich solutions, under different temperature respectively.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; spie.; chinese opt soc.; [liu, lei; chen, nuofu; gao, fubao; yin, zhigang; bai, yiming; zhang, xingwang] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | solid state lighting and solar energy technologies
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7016-4 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7840]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yin ZG,Zhang XW. Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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