Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
文献类型：会议论文
| 作者 | Wang, XH ; Wan, XL ; Xiao, HL ; Feng, C ; Way, BZ ; Yang, CB ; Wang, JX ; Wang, CM ; Ran, JX ; Hu, GX ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | conference on advanced materials and devices for sensing and imaging iii |
| 会议日期 | nov 12-14, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | hydrogen sensor AlGaN/GaN heterostructure Schottky diode |
| 页码 | 6829: r8291-r8291 |
| 通讯作者 | wan, xl, chinese acad sci, inst semicond, novel mat lab, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | pt/algan/aln/gan schottky diodes have been fabricated and characterized for h-2 sensing. platinum (pt) with a thickness of 20nm was evaporated on the sample to form the schottky contact. the ohmic contact, formed by evaporated ti/al/ni/au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees c for 30 s in n-2 ambience. both the forward and reverse current of the device increased greatly when exposed to h-2 gas. the sensor's responses under different hydrogen concentrations from 500ppm to 10% h-2 in n-2 at 300k were investigated. a shift of 0.45v at 297k is obtained at a fixed forward current for switching from n-2 to 10% h-2 in n-2. time response of the sensor at a fixed bias of 0.5 v was also measured. the turn-on response of the device was rapid, while the recovery of the sensor at n-2 atmosphere was rather slow. but it recovered quickly when the device was exposed to the air. the decrease in the barrier height of the diode was calculated to be about 160mev upon introduction of 10% h-2 into the ambient. the sensitivity of the sensor is also calculated. some thermodynamics analyses have been done according to the langmuir isotherm equation. |
| 英文摘要 | pt/algan/aln/gan schottky diodes have been fabricated and characterized for h-2 sensing. platinum (pt) with a thickness of 20nm was evaporated on the sample to form the schottky contact. the ohmic contact, formed by evaporated ti/al/ni/au metals, was subsequently annealed by a rapid thermal treatment at 860 degrees c for 30 s in n-2 ambience. both the forward and reverse current of the device increased greatly when exposed to h-2 gas. the sensor's responses under different hydrogen concentrations from 500ppm to 10% h-2 in n-2 at 300k were investigated. a shift of 0.45v at 297k is obtained at a fixed forward current for switching from n-2 to 10% h-2 in n-2. time response of the sensor at a fixed bias of 0.5 v was also measured. the turn-on response of the device was rapid, while the recovery of the sensor at n-2 atmosphere was rather slow. but it recovered quickly when the device was exposed to the air. the decrease in the barrier height of the diode was calculated to be about 160mev upon introduction of 10% h-2 into the ambient. the sensitivity of the sensor is also calculated. some thermodynamics analyses have been done according to the langmuir isotherm equation.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:57z (gmt). no. of bitstreams: 1 701.pdf: 347213 bytes, checksum: 4ce8d4c2325986ae0ae5a132faa09bb4 (md5) previous issue date: 2008; spie.; chinese opt soc.; [wang, xinhua; wan, xiaoliang; xiao, hongling; feng, chun; way, baozhu; yang, cuibai; wang, junxi; wang, ciomei; ran, junxue; hu, guoxin; li, jinmin] chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | advanced materials and devices for sensing and imaging iii
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-7004-1 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7842]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, XH,Wan, XL,Xiao, HL,et al. Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R[C]. 见:conference on advanced materials and devices for sensing and imaging iii. beijing, peoples r china. nov 12-14, 2007. |
入库方式： OAI收割
来源：半导体研究所
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