Measurement and analysis of microwave frequency response of semiconductor optical amplifiers - art. no. 682406
文献类型：会议论文
| 作者 | Liu, J ; Zhang, SJ ; Hu, YH ; Xie, L ; Huang, YZ ; Zhu, NH |
| 出版日期 | 2008 |
| 会议名称 | conference on semiconductor lasers and applications iii |
| 会议日期 | nov 12-13, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | semiconductor optical amplifier microwave frequency response direct-subtracting method vector network analyzer multisectional model rate equation steady state small-signal state |
| 页码 | 6824: 82406-82406 |
| 通讯作者 | liu, j, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 中文摘要 | the measurement and analysis of the microwave frequency response of semiconductor optical amplifiers (soas) are proposed in this paper. the response is measured using a vector network analyzer. then with the direct-subtracting method, which is based on the definition of scattering parameters of optoelectronic devices, the responses of both the optical signal source and the photodetector are eliminated, and the response of only the soa is extracted. some characteristics of the responses can be observed: the responses are quasi-highpass; the gain increases with the bias current; and the response becomes more gradient while the bias current is increasing. the multisectional model of an soa is then used to analyze the response theoretically. by deducing from the carrier rate equation of one section under the steady state and the small-signal state, the expression of the frequency response is obtained. then by iterating the expression, the response of the whole soa is simulated. the simulated results are in good agreement with the measured on the three main characteristics, which are also explained by the deduced results. this proves the validity of the theoretical analysis. |
| 英文摘要 | the measurement and analysis of the microwave frequency response of semiconductor optical amplifiers (soas) are proposed in this paper. the response is measured using a vector network analyzer. then with the direct-subtracting method, which is based on the definition of scattering parameters of optoelectronic devices, the responses of both the optical signal source and the photodetector are eliminated, and the response of only the soa is extracted. some characteristics of the responses can be observed: the responses are quasi-highpass; the gain increases with the bias current; and the response becomes more gradient while the bias current is increasing. the multisectional model of an soa is then used to analyze the response theoretically. by deducing from the carrier rate equation of one section under the steady state and the small-signal state, the expression of the frequency response is obtained. then by iterating the expression, the response of the whole soa is simulated. the simulated results are in good agreement with the measured on the three main characteristics, which are also explained by the deduced results. this proves the validity of the theoretical analysis.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:58z (gmt). no. of bitstreams: 1 707.pdf: 346405 bytes, checksum: 24b867fcd2b464f8d5ccc953e7eac570 (md5) previous issue date: 2008; spie.; chinese opt soc.; [liu, jian; hu, yong-hong; xie, liang; huang, yong-zhen; zhu, ning-hua] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | spie.; chinese opt soc. |
| 会议录 | semiconductor lasers and applications iii
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-6999-1 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7852]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, J,Zhang, SJ,Hu, YH,et al. Measurement and analysis of microwave frequency response of semiconductor optical amplifiers - art. no. 682406[C]. 见:conference on semiconductor lasers and applications iii. beijing, peoples r china. nov 12-13, 2007. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。