On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J
文献类型：会议论文
| 作者 | Shou-Li Z ; De-Ping X ; Ya-Li I ; Hai-Lin C ; Yin-Zhe C ; Ang M ; Ji-He L ; Jun-Hua G |
| 出版日期 | 2007 |
| 会议名称 | conference on optoelectronic materials and devices ii |
| 会议日期 | nov 02-05, 2007 |
| 会议地点 | wuhan, peoples r china |
| 关键词 | RCE- p-i-n-PD |
| 页码 | 6782: j7820-j7820 part 1-2 |
| 通讯作者 | shou-li, z, zhejiang univ technol, coll informat engn, hangzhou 310014, peoples r china. |
| 中文摘要 | we have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (rce- p-i-n-pd) and a single heterojunction bipolar transistor (shbt) with the same epitaxy grown layer structure. mocvd growth of the different layer structure for the gaas based rce- p-i-n-pd/shbt require compromises to obtain the best performance of the integrated devices. the shbt is proposed with super-lattice in the collector, and the structure of the base and the collector of the shbt is used for the rce. up to now, the dc characteristics of the integrated device have been obtained. |
| 英文摘要 | we have explored the shared-layer integration fabrication of an resonant-cavity-enhanced p-i-n photodector (rce- p-i-n-pd) and a single heterojunction bipolar transistor (shbt) with the same epitaxy grown layer structure. mocvd growth of the different layer structure for the gaas based rce- p-i-n-pd/shbt require compromises to obtain the best performance of the integrated devices. the shbt is proposed with super-lattice in the collector, and the structure of the base and the collector of the shbt is used for the rce. up to now, the dc characteristics of the integrated device have been obtained.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; spie.; chinese opt soc.; china inst commun.; peoples govt wuhan municipal.; [shou-li, zhou; ya-li, in] zhejiang univ technol, coll informat engn, hangzhou 310014, peoples r china; [de-ping, xiong] guangdong univ technol, sch phys & optoelect engn, guangzhou 510016, guangdong, peoples r china; [hai-lin, cui; yin-zhe, chong; ang, miao; ji-he, lv] beijing univ posts & telecommun, sch telecommun engn, beijing 100876, peoples r china; [jun-hua, gao] chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | spie.; chinese opt soc.; china inst commun.; peoples govt wuhan municipal. |
| 会议录 | optoelectronic materials and devices ii
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-6945-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7858]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shou-Li Z,De-Ping X,Ya-Li I,et al. On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J[C]. 见:conference on optoelectronic materials and devices ii. wuhan, peoples r china. nov 02-05, 2007. |
入库方式： OAI收割
来源：半导体研究所
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