Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y
文献类型：会议论文
| 作者 | Pan JQ
|
| 出版日期 | 2007 |
| 会议名称 | conference on optoelectronic materials and devices ii |
| 会议日期 | nov 02-05, 2007 |
| 会议地点 | wuhan, peoples r china |
| 关键词 | butt joint |
| 页码 | 6782: y7820-y7820 part 1-2 |
| 通讯作者 | cheng, yb, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | high performance ingaasp/ingaasp strained compensated multiple-quantum-well (mqw) electroabsorption modulators (eam) monolithically integrated with a dfb laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (movpe) based on a novel butt joint scheme. the optimization thickness of upper sch layer for dfb and eam was obtained of the proposed mqw structure of the eam through numerical simulation and experiment. the device containing 250(mu m) dfb and 170(mu m) eam shows good material quality and exhibits a threshold current of 17ma, an extinction ratio of higher than 30 db and a very high modulation efficiency (12db/v) from 0v to 1v. by adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pf corresponding to a 3db bandwidth more than 20ghz. |
| 英文摘要 | high performance ingaasp/ingaasp strained compensated multiple-quantum-well (mqw) electroabsorption modulators (eam) monolithically integrated with a dfb laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (movpe) based on a novel butt joint scheme. the optimization thickness of upper sch layer for dfb and eam was obtained of the proposed mqw structure of the eam through numerical simulation and experiment. the device containing 250(mu m) dfb and 170(mu m) eam shows good material quality and exhibits a threshold current of 17ma, an extinction ratio of higher than 30 db and a very high modulation efficiency (12db/v) from 0v to 1v. by adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pf corresponding to a 3db bandwidth more than 20ghz.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; spie.; chinese opt soc.; china inst commun.; peoples govt wuhan municipal.; [cheng, yuanbing; pan, jiaoqing; zhou, fan; wang, baojun; zhu, hongliang; zhao, lingjuan; wang, wei] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | spie.; chinese opt soc.; china inst commun.; peoples govt wuhan municipal. |
| 会议录 | optoelectronic materials and devices ii
 |
| 会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
| 语种 | 英语 |
| ISSN号 | 0277-786x |
| ISBN号 | 978-0-8194-6945-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/7860]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan JQ. Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y[C]. 见:conference on optoelectronic materials and devices ii. wuhan, peoples r china. nov 02-05, 2007. |
入库方式： OAI收割
来源：半导体研究所
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