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Design and Realization of Index-Coupled DFB Laser with Sampled Grating

文献类型：会议论文

作者Wang H ; Zhu HL ; Chen XF ; Li JS ; Wang LS ; Zhang W ; Wang W
出版日期2008
会议名称ieee photonicsglobal at singapore
会议日期dec 08-11, 2008
会议地点singapore, singapore
关键词TUNING RANGE
页码vols 1 and 2: 668-670
通讯作者wang, h, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china.
中文摘要an index-coupled distributed feedback laser with the sampled grating has been designed and fabricated. the +1(st) order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5329 mu m in the experiment. the sampled grating is formed by a conventional holographic exposure combined with the usual photolithography. the typical threshold current of dfb laser with the sampled grating is 25ma, and the optical output is about 10mw at the injected current of 100ma.
英文摘要an index-coupled distributed feedback laser with the sampled grating has been designed and fabricated. the +1(st) order reflection of the sampled grating is utilized for laser single mode operation, which is 1.5329 mu m in the experiment. the sampled grating is formed by a conventional holographic exposure combined with the usual photolithography. the typical threshold current of dfb laser with the sampled grating is 25ma, and the optical output is about 10mw at the injected current of 100ma.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee.; [wang, h.; zhu, h. l.; wang, l. s.; zhang, w.; wang, w.] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别其他
会议主办者ieee.
会议录2008 ieee photonicsglobal@singapore (ipgc)
会议录出版者ieee ; 345 e 47th st, new york, ny 10017 usa
学科主题光电子学
会议录出版地345 e 47th st, new york, ny 10017 usa
语种英语
ISBN号978-1-4244-3901-0
源URL[http://ir.semi.ac.cn/handle/172111/8260]  
专题半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式
GB/T 7714		 Wang H,Zhu HL,Chen XF,et al. Design and Realization of Index-Coupled DFB Laser with Sampled Grating[C]. 见:ieee photonicsglobal at singapore. singapore, singapore. dec 08-11, 2008.

入库方式： OAI收割

来源：半导体研究所

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