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Morphology and wetting layer properties of InAs/GaAs nanostructures

文献类型：会议论文

作者Xu B
出版日期2009
会议名称5th international conference on semiconductor quantum dots
会议日期may 11-16, 2008
会议地点gyeongju, south korea
关键词MOLECULAR-BEAM EPITAXY
页码vol 6,no 4,6 (4): 789-792
通讯作者chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china.
中文摘要in this work, we present the growth of inas rings by droplet epitaxy. a complete process from the rings formation to their density saturation has been demonstrated: a morphological evolution with the varying of the indium deposition amount has been, clearly observed. our results indicate that there, is a critical deposition amount (similar to 1.1 ml) for the indium to form inas dots before droplets form; there is also a critical deposition amount (similar to 1.4 ml) to form inas ring, but it is caused by the formation of droplets as the deposition amount increases. the density of the rings saturates when the deposition amount exceeds similar to 3.3 ml; because the adsorbed indium atoms block sites for further adsorption and the following supplied in only contributes to the size increase of in droplets. still, as the in deposition amount increases, we can find coupled quantum rings. moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the in amount. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim
英文摘要in this work, we present the growth of inas rings by droplet epitaxy. a complete process from the rings formation to their density saturation has been demonstrated: a morphological evolution with the varying of the indium deposition amount has been, clearly observed. our results indicate that there, is a critical deposition amount (similar to 1.1 ml) for the indium to form inas dots before droplets form; there is also a critical deposition amount (similar to 1.4 ml) to form inas ring, but it is caused by the formation of droplets as the deposition amount increases. the density of the rings saturates when the deposition amount exceeds similar to 3.3 ml; because the adsorbed indium atoms block sites for further adsorption and the following supplied in only contributes to the size increase of in droplets. still, as the in deposition amount increases, we can find coupled quantum rings. moreover, the wetting layer properties of these structures are studied by reflectance difference spectroscopy, which shows a complicated evolution with the in amount. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; [zhao, chao; chen, yonghai; xu, bo; tang, chenguang; wang, zhanguo] chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
收录类别其他
会议录physica status solidi c - current topics in solid state physics
会议录出版者wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany
学科主题半导体材料
会议录出版地pappelallee 3, w-69469 weinheim, germany
语种英语
ISSN号1610-1634
源URL[http://ir.semi.ac.cn/handle/172111/8266]  
专题半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式
GB/T 7714		 Xu B. Morphology and wetting layer properties of InAs/GaAs nanostructures[C]. 见:5th international conference on semiconductor quantum dots. gyeongju, south korea. may 11-16, 2008.

入库方式： OAI收割

来源：半导体研究所

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