Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers
文献类型：会议论文
| 作者 | Ma WQ ; Cao YL; Yang T
|
| 出版日期 | 2009 |
| 会议名称 | 5th international conference on semiconductor quantum dots |
| 会议日期 | may 11-16, 2008 |
| 会议地点 | gyeongju, south korea |
| 关键词 | DENSITY-OF-STATES |
| 页码 | vol 6,no 4,6 (4): 948-951 |
| 通讯作者 | yang, t, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | a theoretical study of modal gain in p-doped 1.3 mu m inas/gaas quantum dot (qd) lasers is presented. the expression of modal gain is derived, which includes an effective ratio that describes how many qds contribute to the modal gain. the calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. the calculated maximum modal gain is is a good agreement with the experimental data. furthermore, qds with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim |
| 英文摘要 | a theoretical study of modal gain in p-doped 1.3 mu m inas/gaas quantum dot (qd) lasers is presented. the expression of modal gain is derived, which includes an effective ratio that describes how many qds contribute to the modal gain. the calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. the calculated maximum modal gain is is a good agreement with the experimental data. furthermore, qds with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; [ji, hai-ming; yang, tao; cao, yu-lian; ma, wen-quan; cao, qing; chen, liang-hui] chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议录 | physica status solidi c - current topics in solid state physics
 |
| 会议录出版者 | wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany |
| 学科主题 | 半导体材料 |
| 会议录出版地 | pappelallee 3, w-69469 weinheim, germany |
| 语种 | 英语 |
| ISSN号 | 1610-1634 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8268]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ma WQ,Cao YL,Yang T. Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers[C]. 见:5th international conference on semiconductor quantum dots. gyeongju, south korea. may 11-16, 2008. |
入库方式： OAI收割
来源：半导体研究所
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