Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor
文献类型：会议论文
| 作者 | Yin, HB ; Wang, XL ; Hu, GX ; Ran, JX ; Xiao, HL ; Li, JM |
| 出版日期 | 2008 |
| 会议名称 | 9th international conference on solid-state and integrated-circuit technology |
| 会议日期 | oct 20-23, 2008 |
| 会议地点 | beijing, peoples r china |
| 页码 | vols 1-4: 710-713 |
| 通讯作者 | yin, hb, chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | a detailed reaction-tran sport model was studied in a showerhead reactor for metal organic chemical vapor deposition of gan film by using computational fluid dynamics simulation. it was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth, and thin temperature gradient above the suscptor can increase the film deposition rate. by above-mentioned research, we can employ higher h (the distance from the susceptor to the inlet), p (operational pressure) and the rate of susceptor rotation to improve the film growth. |
| 英文摘要 | a detailed reaction-tran sport model was studied in a showerhead reactor for metal organic chemical vapor deposition of gan film by using computational fluid dynamics simulation. it was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth, and thin temperature gradient above the suscptor can increase the film deposition rate. by above-mentioned research, we can employ higher h (the distance from the susceptor to the inlet), p (operational pressure) and the rate of susceptor rotation to improve the film growth.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t07:08:14z (gmt). no. of bitstreams: 1 276.pdf: 3477342 bytes, checksum: ab14f0c641449c009b45d3b6ad074533 (md5) previous issue date: 2008; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [yin, haibo] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter. |
| 会议录 | 2008 9th international conference on solid-state and integrated-circuit technology
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-2185-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8278]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yin, HB,Wang, XL,Hu, GX,et al. Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008. |
入库方式： OAI收割
来源：半导体研究所
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