Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology
文献类型：会议论文
| 作者 | Huang BJ ; Zan Dong; Xu Zhang
|
| 出版日期 | 2008 |
| 会议名称 | 9th international conference on solid-state and integrated-circuit technology |
| 会议日期 | oct 20-23, 2008 |
| 会议地点 | beijing, peoples r china |
| 关键词 | SILICON |
| 页码 | vols 1-4: 985-987 |
| 通讯作者 | huang, bj, chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | a monolithic silicon cmos optoelectronic integrated circuit (oeic) is designed and fabricated with standard 0.35 mu m cmos technology. this oeic circuit consists of light emitting diodes (led), silicon dioxide waveguide, photodiodes and receiver circuit. the silicon led operates in reverse breakdown mode and can be turned on at 8.5v 10ma. the silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. a two pn-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. the readout circuitry in pixels is exploited to handle as small as 0.1na photocurrent. simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon cmos photodetcctor and receiver circuit. |
| 英文摘要 | a monolithic silicon cmos optoelectronic integrated circuit (oeic) is designed and fabricated with standard 0.35 mu m cmos technology. this oeic circuit consists of light emitting diodes (led), silicon dioxide waveguide, photodiodes and receiver circuit. the silicon led operates in reverse breakdown mode and can be turned on at 8.5v 10ma. the silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. a two pn-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. the readout circuitry in pixels is exploited to handle as small as 0.1na photocurrent. simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon cmos photodetcctor and receiver circuit.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [huang, beiju; xuzhang; zandong; weiwang; chen, hongda] chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter. |
| 会议录 | 2008 9th international conference on solid-state and integrated-circuit technology
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-2185-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8282]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang BJ,Zan Dong,Xu Zhang. Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。