AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
文献类型：会议论文
| 作者 | Hou QF ; Zhang ML
|
| 出版日期 | 2008 |
| 会议名称 | 9th international conference on solid-state and integrated-circuit technology |
| 会议日期 | oct 20-23, 2008 |
| 会议地点 | beijing, peoples r china |
| 关键词 | ALGAN/GAN HEMTS |
| 页码 | vols 1-4: 1106-1109 |
| 通讯作者 | tang, j, chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | algan/aln/gan/ingan/gan double heterojunction high electron mobility transistors (dh-hemts) structures with improved buffer isolation have been investigated. the structures were grown by mocvd on sapphire substrate. afm result of this structure shows a good surface morphology with the root-mean-square roughness (rms) of 0.196 nm for a scan area of 5 mu mx5 mu m. a mobility as high as 1950 cm(2)/vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. average sheet resistance of 327 omega/sq was achieved. the hemts device using the materials was fabricated, and a maximum drain current density of 718.5 ma/mm, an extrinsic transconductance of 248 ms/mm, a current gain cutoff frequency of 16 ghz and a maximum frequency of oscillation 35 ghz were achieved. |
| 英文摘要 | algan/aln/gan/ingan/gan double heterojunction high electron mobility transistors (dh-hemts) structures with improved buffer isolation have been investigated. the structures were grown by mocvd on sapphire substrate. afm result of this structure shows a good surface morphology with the root-mean-square roughness (rms) of 0.196 nm for a scan area of 5 mu mx5 mu m. a mobility as high as 1950 cm(2)/vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. average sheet resistance of 327 omega/sq was achieved. the hemts device using the materials was fabricated, and a maximum drain current density of 718.5 ma/mm, an extrinsic transconductance of 248 ms/mm, a current gain cutoff frequency of 16 ghz and a maximum frequency of oscillation 35 ghz were achieved.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [tang, jian; wang, xiaoliang; xiao, hongling; ran, junxue; zhang, minglan; hu, guoxin; feng, chun; hou, qifeng; wei, meng; li, jinmin; wang, zhanguo] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter. |
| 会议录 | 2008 9th international conference on solid-state and integrated-circuit technology
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-2185-5 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8286]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hou QF,Zhang ML. AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008. |
入库方式： OAI收割
来源：半导体研究所
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