中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

文献类型:会议论文

作者Hou QF; Zhang ML
出版日期2008
会议名称9th international conference on solid-state and integrated-circuit technology
会议日期oct 20-23, 2008
会议地点beijing, peoples r china
关键词ALGAN/GAN HEMTS
页码vols 1-4: 1106-1109
通讯作者tang, j, chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china.
中文摘要algan/aln/gan/ingan/gan double heterojunction high electron mobility transistors (dh-hemts) structures with improved buffer isolation have been investigated. the structures were grown by mocvd on sapphire substrate. afm result of this structure shows a good surface morphology with the root-mean-square roughness (rms) of 0.196 nm for a scan area of 5 mu mx5 mu m. a mobility as high as 1950 cm(2)/vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. average sheet resistance of 327 omega/sq was achieved. the hemts device using the materials was fabricated, and a maximum drain current density of 718.5 ma/mm, an extrinsic transconductance of 248 ms/mm, a current gain cutoff frequency of 16 ghz and a maximum frequency of oscillation 35 ghz were achieved.
英文摘要algan/aln/gan/ingan/gan double heterojunction high electron mobility transistors (dh-hemts) structures with improved buffer isolation have been investigated. the structures were grown by mocvd on sapphire substrate. afm result of this structure shows a good surface morphology with the root-mean-square roughness (rms) of 0.196 nm for a scan area of 5 mu mx5 mu m. a mobility as high as 1950 cm(2)/vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. average sheet resistance of 327 omega/sq was achieved. the hemts device using the materials was fabricated, and a maximum drain current density of 718.5 ma/mm, an extrinsic transconductance of 248 ms/mm, a current gain cutoff frequency of 16 ghz and a maximum frequency of oscillation 35 ghz were achieved.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [tang, jian; wang, xiaoliang; xiao, hongling; ran, junxue; zhang, minglan; hu, guoxin; feng, chun; hou, qifeng; wei, meng; li, jinmin; wang, zhanguo] chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
收录类别其他
会议主办者ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.
会议录2008 9th international conference on solid-state and integrated-circuit technology
会议录出版者ieee ; 345 e 47th st, new york, ny 10017 usa
学科主题半导体材料
会议录出版地345 e 47th st, new york, ny 10017 usa
语种英语
ISBN号978-1-4244-2185-5
源URL[http://ir.semi.ac.cn/handle/172111/8286]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Hou QF,Zhang ML. AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008.

入库方式: OAI收割

来源:半导体研究所

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