Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films
文献类型：会议论文
| 作者 | Sun BJ ; Zhao DG
|
| 出版日期 | 2009 |
| 会议名称 | international materials research conference |
| 会议日期 | jun 09-12, 2008 |
| 会议地点 | chongqing, peoples r china |
| 关键词 | AlxGa1-xN |
| 页码 | pts 1 and 2,610-613,: 598-603 part 1-2 |
| 通讯作者 | zhao, l, luoyang optoelect inst, luoyang, peoples r china. |
| 中文摘要 | the correlation between the energy band-gap of alxga1-xn epitaxial thin films and lattice strain was investigated using both high resolution x-ray diffraction (hrxrd) and spectroscopic ellipsometry (se). the al fraction, lattice relaxation, and elastic lattice strain were determined for all alxga1-xn epilayers, and the energy gap as well. given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be. |
| 英文摘要 | the correlation between the energy band-gap of alxga1-xn epitaxial thin films and lattice strain was investigated using both high resolution x-ray diffraction (hrxrd) and spectroscopic ellipsometry (se). the al fraction, lattice relaxation, and elastic lattice strain were determined for all alxga1-xn epilayers, and the energy gap as well. given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; mat res soc.; chinese mat res soc.; [zhao, lan; lu, zhengxiong; cheng, caijing; zhang, xiangfeng; sun, weiguo] luoyang optoelect inst, luoyang, peoples r china; [zhao, degang; zhu, jianjun; sun, baojuan] chinese acad sci, inst semicond, beijing 100083, peoples r china; [qu, bo] jordan valley semicond uk ltd, durham, england |
| 收录类别 | 其他 |
| 会议主办者 | mat res soc.; chinese mat res soc. |
| 会议录 | materials research
 |
| 会议录出版者 | trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 语种 | 英语 |
| ISSN号 | 0255-5476 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8312]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun BJ,Zhao DG. Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films[C]. 见:international materials research conference. chongqing, peoples r china. jun 09-12, 2008. |
入库方式： OAI收割
来源：半导体研究所
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