Growth behavior of AlInGaN films
文献类型：会议论文
| 作者 | Shang JZ ; Zhang BP ; Mao MH ; Cai LE ; Zhang JY ; Fang ZL ; Liu BL ; Yu JZ ; Wang QM ; Kusakabe K ; Ohkawa K |
| 出版日期 | 2009 |
| 会议名称 | 4th asian conference on crystal growth and crystal technology |
| 会议日期 | may 21-24, 2008 |
| 会议地点 | sendai, japan |
| 关键词 | Scanning electron microscope |
| 页码 | 311 (3): 474-477 jan 15 |
| 通讯作者 | zhang, bp, xiamen univ, dept phys, xiamen 361005, peoples r china. |
| 中文摘要 | the structural and surface properties of alingan quaternary films grown at different temperatures on gan templates by metalorganic chemical vapor deposition are investigated. formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. the surface is featured with v-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of alingan layers. the two-layer structure is interpreted by taking into account of the strain status in alingan layers. (c) 2008 elsevier b.v. all rights reserved. |
| 英文摘要 | the structural and surface properties of alingan quaternary films grown at different temperatures on gan templates by metalorganic chemical vapor deposition are investigated. formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. the surface is featured with v-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of alingan layers. the two-layer structure is interpreted by taking into account of the strain status in alingan layers. (c) 2008 elsevier b.v. all rights reserved.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; intelligent cosmos acad fdn.; murata sci fdn.; sendaitourism & convent bureau.; [shang, j. z.; zhang, b. p.; mao, m. h.; cai, l. e.; zhang, j. y.; fang, z. l.; liu, b. l.; yu, j. z.; wang, q. m.] xiamen univ, dept phys, xiamen 361005, peoples r china; [shang, j. z.; zhang, b. p.; mao, m. h.; cai, l. e.; zhang, j. y.; fang, z. l.; liu, b. l.; yu, j. z.; wang, q. m.] xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china; [zhang, j. y.; yu, j. z.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; [kusakabe, k.; ohkawa, k.] tokyo univ sci, dept appl phys, shinjuku ku, tokyo 1628601, japan |
| 收录类别 | 其他 |
| 会议主办者 | intelligent cosmos acad fdn.; murata sci fdn.; sendaitourism & convent bureau. |
| 会议录 | journal of crystal growth
 |
| 会议录出版者 | elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands |
| 学科主题 | 光电子学 |
| 会议录出版地 | po box 211, 1000 ae amsterdam, netherlands |
| 语种 | 英语 |
| ISSN号 | 0022-0248 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8324]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shang JZ,Zhang BP,Mao MH,et al. Growth behavior of AlInGaN films[C]. 见:4th asian conference on crystal growth and crystal technology. sendai, japan. may 21-24, 2008. |
入库方式： OAI收割
来源：半导体研究所
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