中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Desorption and Ripening of Low Density InAs Quantum Dots

文献类型:会议论文

作者Zhan, F ; Huang, SS ; Niu, ZC ; Ni, HQ ; Xiong, YH ; Fang, ZD ; Zhou, HY ; Luo, Y
出版日期2010-10-15
会议名称6th international conference on nanoscience and technology
会议日期jun 04-06, 2007
会议地点beijing, peoples r china
关键词Quantum Dots
页码9 (2): 844-847 sp. iss. si feb
通讯作者huang, ss, tsinghua univ, dept elect engn, state key lab integrated optoelect, beijing 100084, peoples r china.
中文摘要in this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (qds) suited for the study of single od properties without resorting to submicron lithography. experiment results demonstrate that inas desorption is significant during growing the low density qds. ripening of inas qds is clearly observed during the post-growth annealing. photoluminescence spectroscopy reveals that the emission wavelength of low density inas qds arrives at 1332.4 nm with a gaas capping layer.
英文摘要in this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (qds) suited for the study of single od properties without resorting to submicron lithography. experiment results demonstrate that inas desorption is significant during growing the low density qds. ripening of inas qds is clearly observed during the post-growth annealing. photoluminescence spectroscopy reveals that the emission wavelength of low density inas qds arrives at 1332.4 nm with a gaas capping layer.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; natl steering comm nanotechnol.; natl ctr nanosci technol.; minist sci & technol china.; natl nat sci fdn china.; minist educ china.; chinese acad sci.; china assoc sci & technol.; [huang, s. s.; luo, y.] tsinghua univ, dept elect engn, state key lab integrated optoelect, beijing 100084, peoples r china; [zhan, f.; zhou, h. y.] beijing normal univ, minist educ, key lab beam technol & mat modificat, beijing 100875, peoples r china; [huang, s. s.; niu, z. c.; ni, h. q.; xiong, y. h.; fang, z. d.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china
收录类别其他
会议主办者natl steering comm nanotechnol.; natl ctr nanosci technol.; minist sci & technol china.; natl nat sci fdn china.; minist educ china.; chinese acad sci.; china assoc sci & technol.
会议录journal of nanoscience and nanotechnology
会议录出版者amer scientific publishers ; 25650 north lewis way, stevenson ranch, ca 91381-1439 usa
学科主题半导体化学
会议录出版地25650 north lewis way, stevenson ranch, ca 91381-1439 usa
语种英语
ISSN号1533-4880
源URL[http://ir.semi.ac.cn/handle/172111/8326]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhan, F,Huang, SS,Niu, ZC,et al. Desorption and Ripening of Low Density InAs Quantum Dots[C]. 见:6th international conference on nanoscience and technology. beijing, peoples r china. jun 04-06, 2007.

入库方式: OAI收割

来源:半导体研究所

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