Desorption and Ripening of Low Density InAs Quantum Dots
文献类型：会议论文
| 作者 | Zhan, F ; Huang, SS ; Niu, ZC ; Ni, HQ ; Xiong, YH ; Fang, ZD ; Zhou, HY ; Luo, Y |
| 出版日期 | 2010-10-15 |
| 会议名称 | 6th international conference on nanoscience and technology |
| 会议日期 | jun 04-06, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | Quantum Dots |
| 页码 | 9 (2): 844-847 sp. iss. si feb |
| 通讯作者 | huang, ss, tsinghua univ, dept elect engn, state key lab integrated optoelect, beijing 100084, peoples r china. |
| 中文摘要 | in this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (qds) suited for the study of single od properties without resorting to submicron lithography. experiment results demonstrate that inas desorption is significant during growing the low density qds. ripening of inas qds is clearly observed during the post-growth annealing. photoluminescence spectroscopy reveals that the emission wavelength of low density inas qds arrives at 1332.4 nm with a gaas capping layer. |
| 英文摘要 | in this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (qds) suited for the study of single od properties without resorting to submicron lithography. experiment results demonstrate that inas desorption is significant during growing the low density qds. ripening of inas qds is clearly observed during the post-growth annealing. photoluminescence spectroscopy reveals that the emission wavelength of low density inas qds arrives at 1332.4 nm with a gaas capping layer.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; natl steering comm nanotechnol.; natl ctr nanosci technol.; minist sci & technol china.; natl nat sci fdn china.; minist educ china.; chinese acad sci.; china assoc sci & technol.; [huang, s. s.; luo, y.] tsinghua univ, dept elect engn, state key lab integrated optoelect, beijing 100084, peoples r china; [zhan, f.; zhou, h. y.] beijing normal univ, minist educ, key lab beam technol & mat modificat, beijing 100875, peoples r china; [huang, s. s.; niu, z. c.; ni, h. q.; xiong, y. h.; fang, z. d.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | natl steering comm nanotechnol.; natl ctr nanosci technol.; minist sci & technol china.; natl nat sci fdn china.; minist educ china.; chinese acad sci.; china assoc sci & technol. |
| 会议录 | journal of nanoscience and nanotechnology
 |
| 会议录出版者 | amer scientific publishers ; 25650 north lewis way, stevenson ranch, ca 91381-1439 usa |
| 学科主题 | 半导体化学 |
| 会议录出版地 | 25650 north lewis way, stevenson ranch, ca 91381-1439 usa |
| 语种 | 英语 |
| ISSN号 | 1533-4880 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8326]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhan, F,Huang, SS,Niu, ZC,et al. Desorption and Ripening of Low Density InAs Quantum Dots[C]. 见:6th international conference on nanoscience and technology. beijing, peoples r china. jun 04-06, 2007. |
入库方式： OAI收割
来源：半导体研究所
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