Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers
文献类型：会议论文
| 作者 | Wu, BP ; Wu, DH ; Xiong, YH ; Huang, SS ; Ni, HQ ; Xu, YQ ; Niu, ZC |
| 出版日期 | 2010-10-15 |
| 会议名称 | 6th international conference on nanoscience and technology |
| 会议日期 | jun 04-06, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | InAs Quantum Dots |
| 页码 | 9 (2): 1333-1336 sp. iss. si feb |
| 通讯作者 | wu, bp, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | in this work, inas quantum dots (qds) grown on a linear graded ingaas metamorphic buffer layer by molecular beam epitaxy have been investigated. the growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (afm). inas qds were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (pl). the effects of post-growth rapid thermal annealing (rta) on the optical properties of the inas qds were investigated. after the rta, the pl peak of the qds was blue-shifted and the full width at half maximum decreased. |
| 英文摘要 | in this work, inas quantum dots (qds) grown on a linear graded ingaas metamorphic buffer layer by molecular beam epitaxy have been investigated. the growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (afm). inas qds were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (pl). the effects of post-growth rapid thermal annealing (rta) on the optical properties of the inas qds were investigated. after the rta, the pl peak of the qds was blue-shifted and the full width at half maximum decreased.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; natl steering comm nanotechnol.; natl ctr nanosci technol.; minist sci & technol china.; natl nat sci fdn china.; minist educ china.; chinese acad sci.; china assoc sci & technol.; [wu, b. p.; wu, d. h.; xiong, y. h.; huang, s. s.; ni, h. q.; xu, y. q.; niu, z. c.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | natl steering comm nanotechnol.; natl ctr nanosci technol.; minist sci & technol china.; natl nat sci fdn china.; minist educ china.; chinese acad sci.; china assoc sci & technol. |
| 会议录 | journal of nanoscience and nanotechnology
 |
| 会议录出版者 | amer scientific publishers ; 25650 north lewis way, stevenson ranch, ca 91381-1439 usa |
| 学科主题 | 半导体化学 |
| 会议录出版地 | 25650 north lewis way, stevenson ranch, ca 91381-1439 usa |
| 语种 | 英语 |
| ISSN号 | 1533-4880 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8332]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu, BP,Wu, DH,Xiong, YH,et al. Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers[C]. 见:6th international conference on nanoscience and technology. beijing, peoples r china. jun 04-06, 2007. |
入库方式： OAI收割
来源：半导体研究所
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