Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer
文献类型：会议论文
| 作者 | Xue CL
|
| 出版日期 | 2008 |
| 会议名称 | 5th ieee international conference on group iv photonics |
| 会议日期 | sep 17-19, 2008 |
| 会议地点 | sorrento, italy |
| 关键词 | SIGE/SI(100) EPITAXIAL-FILMS |
| 页码 | : 140-142 |
| 通讯作者 | cheng, bw, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 中文摘要 | a ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees c. on the low temperature ge buffer layer with pits, high quality ge layer was grown at 600 degrees c with a threading dislocation density of similar to 1x10(5)cm(-2). according to channeling and random rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the ge/si interface and immediately under the surface peak. the root-mean-square surface roughness of ge film was 0.33nm. |
| 英文摘要 | a ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees c. on the low temperature ge buffer layer with pits, high quality ge layer was grown at 600 degrees c with a threading dislocation density of similar to 1x10(5)cm(-2). according to channeling and random rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the ge/si interface and immediately under the surface peak. the root-mean-square surface roughness of ge film was 0.33nm.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee.; informat soc technol.; helios.; [cheng, b. w.; xue, h. y.; hu, d.; han, g. q.; zeng, y. g.; bai, a. q.; xue, c. l.; luo, l. p.; zuo, y. h.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | ieee.; informat soc technol.; helios. |
| 会议录 | 2008 5th ieee international conference on group iv photonics
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-1769-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8342]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xue CL. Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer[C]. 见:5th ieee international conference on group iv photonics. sorrento, italy. sep 17-19, 2008. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。