Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As
文献类型：会议论文
| 作者 | Gan HD
|
| 出版日期 | 2010-10-15 |
| 会议名称 | international magnetics conference (intermag) |
| 会议日期 | may 04-08, 2008 |
| 会议地点 | madrid, spain |
| 关键词 | Magnetic analysis |
| 页码 | 44 (11): 2692-2695 part 1 nov |
| 通讯作者 | zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | we report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (ga, cr)as films. the crystalline quality and magnetic properties are sensitive to the growth conditions. the single-phase (ga, cr)as film with the curie temperature of 10 k is synthesized at growth temperature t-s = 250 degrees c and with nominal cr content x = 0.016. however, for the films with x > 0.02, the aggregation of cr atoms is strongly enhanced as both t. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. the origin of room-temperature ferromagnetism in (ga, cr)as films with nanoclusters is also discussed. |
| 英文摘要 | we report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (ga, cr)as films. the crystalline quality and magnetic properties are sensitive to the growth conditions. the single-phase (ga, cr)as film with the curie temperature of 10 k is synthesized at growth temperature t-s = 250 degrees c and with nominal cr content x = 0.016. however, for the films with x > 0.02, the aggregation of cr atoms is strongly enhanced as both t. and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. the origin of room-temperature ferromagnetism in (ga, cr)as films with nanoclusters is also discussed.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; [lu, j.; bi, j. f.; wang, w. z.; gan, h. d.; meng, h. j.; deng, j. j.; zheng, h. z.; zhao, j. h.] chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议录 | ieee transactions on magnetics
 |
| 会议录出版者 | ieee-inst electrical electronics engineers inc ; 445 hoes lane, piscataway, nj 08855 usa |
| 学科主题 | 半导体物理 |
| 会议录出版地 | 445 hoes lane, piscataway, nj 08855 usa |
| 语种 | 英语 |
| ISSN号 | 0018-9464 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8362]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gan HD. Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As[C]. 见:international magnetics conference (intermag). madrid, spain. may 04-08, 2008. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。