Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
文献类型：会议论文
| 作者 | Feng, W (Feng, W.) ; Pan, JQ (Pan, J. Q.) ; Zhou, F (Zhou, F.) ; Zhao, LJ (Zhao, L. J.) ; Zhu, HL (Zhu, H. L.) ; Wang, W (Wang, W.) |
| 出版日期 | 2006 |
| 会议名称 | 12th international conference on indium phosphide and related materials |
| 会议日期 | may 07-11, 2006 |
| 会议地点 | princeton, nj |
| 关键词 | BURIED-HETEROSTRUCTURE LASERS BANDGAP ENERGY CONTROL VAPOR-PHASE EPITAXY PRESSURE MOVPE CONVERTER |
| 页码 | 306-309 |
| 通讯作者 | feng, w, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | oxide-free ingaalas waveguides have been grown on the inp substrates patterned with pairs of sio2 mask stripes using narrow stripe selective movpe. the mask stripe width is varied from 0 to 40 pm, while the window region width between a pair of mask stripes is fixed at 1.5, 2.5 and 3.5 mu m, respectively. smooth surface s and flat interfaces are obtained in the selectively grown inqaalas waveguides. there exhibit strong dependences of the thickness enhancement ratio and the photoluminescence (pl) spectrum on the mask stripe width and the window region width for the ingaalas wavegwdes. a large pl peak wavelength shift of 79 nm and a pl full width of at half maximum (fwhm) of less than 64 mev are obtained simultaneously. some possible interpretations for our investigations are presented by considering both the migration effect from a masked region (mmr) and the lateral vapor diffusion effect (lvd). |
| 英文摘要 | oxide-free ingaalas waveguides have been grown on the inp substrates patterned with pairs of sio2 mask stripes using narrow stripe selective movpe. the mask stripe width is varied from 0 to 40 pm, while the window region width between a pair of mask stripes is fixed at 1.5, 2.5 and 3.5 mu m, respectively. smooth surface s and flat interfaces are obtained in the selectively grown inqaalas waveguides. there exhibit strong dependences of the thickness enhancement ratio and the photoluminescence (pl) spectrum on the mask stripe width and the window region width for the ingaalas wavegwdes. a large pl peak wavelength shift of 79 nm and a pl full width of at half maximum (fwhm) of less than 64 mev are obtained simultaneously. some possible interpretations for our investigations are presented by considering both the migration effect from a masked region (mmr) and the lateral vapor diffusion effect (lvd).; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:06z (gmt). no. of bitstreams: 1 2244.pdf: 427249 bytes, checksum: 21e60138dc731e633bafac9093a5c0ea (md5) previous issue date: 2006; ieee. princeton univ; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ieee. princeton univ |
| 会议录 | 2006 international conference on indium phosphide and related materials conference proceedings
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-0-7803-9557-2 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9786]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Feng, W ,Pan, JQ ,Zhou, F ,et al. Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE[C]. 见:12th international conference on indium phosphide and related materials. princeton, nj. may 07-11, 2006. |
入库方式： OAI收割
来源：半导体研究所
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