Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
文献类型：会议论文
| 作者 | Sun, GS (Sun, Guosheng) ; Ning, J (Ning, Jin) ; Gong, QC (Gong, Quancheng) ; Gao, X (Gao, Xin) ; Wang, L (Wang, Lei) ; Liu, XF (Liu, Xingfang) ; Zeng, YP (Zeng, Yiping) ; Li, JM (Li, Jinmin) |
| 出版日期 | 2006 |
| 会议名称 | international conference on silicon carbide and related materials (icscrm 2005) |
| 会议日期 | sep 18-23, 2005 |
| 会议地点 | pittsburgh, pa |
| 关键词 | homoepitaxial growth low-pressure hot-wall CVD structural and optical characteristics intentional doping Schottky barrier diodes |
| 页码 | pts 1 and 2 527-529: 191-194 |
| 通讯作者 | sun, gs, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | horizontal air-cooled low-pressure hot-wall cvd (lp-hwcvd) system is developed to get high quality 4h-sic epilayers. homoepitaxial growth of 4h-sic on off-oriented si-face (0001) 4h-sic substrates purchased from cree is performed at a typical temperature of 1500 degrees c with a pressure of 40 torr by using sih4+c2h4+h-2 gas system. the surface morphologies and structural and optical properties of 4h-sic epilayers are characterized with nomarski optical microscope, atomic force microscopy (afm), x-ray diffraction, raman scattering, and low temperature photoluminescence (ltpl). the background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). the fwhm of the rocking curve is 9-16 arcsec. intentional n-doped and b-doped 4h-sic epilayers are obtained by in-situ doping of nh3 and b2h6, respectively. schottky barrier diodes with reverse blocking voltage of over 1000 v are achieved preliminarily. |
| 英文摘要 | horizontal air-cooled low-pressure hot-wall cvd (lp-hwcvd) system is developed to get high quality 4h-sic epilayers. homoepitaxial growth of 4h-sic on off-oriented si-face (0001) 4h-sic substrates purchased from cree is performed at a typical temperature of 1500 degrees c with a pressure of 40 torr by using sih4+c2h4+h-2 gas system. the surface morphologies and structural and optical properties of 4h-sic epilayers are characterized with nomarski optical microscope, atomic force microscopy (afm), x-ray diffraction, raman scattering, and low temperature photoluminescence (ltpl). the background doping of 32 pm-thick sample has been reduced to 2-5 x 10(15) cm(-3). the fwhm of the rocking curve is 9-16 arcsec. intentional n-doped and b-doped 4h-sic epilayers are obtained by in-situ doping of nh3 and b2h6, respectively. schottky barrier diodes with reverse blocking voltage of over 1000 v are achieved preliminarily.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:06z (gmt). no. of bitstreams: 1 2245.pdf: 1005088 bytes, checksum: 9198644d99f99cf6086ae9f2262cde4f (md5) previous issue date: 2006; aixtron.; cree inc.; dow corning.; ge global res ctr.; ii vi, inc.; intrins semicond.; kla tencor.; siced.; sicrystal ag.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | aixtron.; cree inc.; dow corning.; ge global res ctr.; ii vi, inc.; intrins semicond.; kla tencor.; siced.; sicrystal ag. |
| 会议录 | silicon carbide and related materials 2005丛书标题: materials science forum
 |
| 会议录出版者 | trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 语种 | 英语 |
| ISBN号 | issn: 0255-5476 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9788]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, GS ,Ning, J ,Gong, QC ,et al. Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition[C]. 见:international conference on silicon carbide and related materials (icscrm 2005). pittsburgh, pa. sep 18-23, 2005. |
入库方式： OAI收割
来源：半导体研究所
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