Self-assembled GaAs quantum rings by MBE droplet epitaxy
文献类型：会议论文
| 作者 | Huang, SS (Huang, Shesong) ; Niu, ZC (Niu, Zhichuan) ; Xia, JB (Xia, Jianbai) |
| 出版日期 | 2007 |
| 会议名称 | china international conference on nanoscience and technology (chinanano 2005) |
| 会议日期 | jun 09-11, 2005 |
| 会议地点 | beijing, peoples r china |
| 关键词 | quantum single rings concentric quantum double rings coupled concentric quantum double ring droplet epitaxy |
| 页码 | pts 1 and 2 121-123: 541-544 part 1-2 |
| 通讯作者 | huang, ss, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | fabrication of semiconductor nanostructures such as quantum dots (qds), quantum rings (qrs) has been considered as the important step for realization of solid state quantum information devices, including qds single photon emission source, qrs single electron memory unit, etc. to fabricate gaas quantum rings, we use molecular beam epitaxy (mbe) droplet technique in this report. in this droplet technique, gallium (ga) molecular beams are supplied initially without arsenic (as) ambience, forming droplet-like nano-clusters of ga atoms on the substrate, then the arsenic beams are supplied to crystallize the ga droplets into gaas crystals. because the morphologies and dimensions of the gaas crystal are governed by the interplay between the surface migration of ga and as adatoms and their crystallization, the shape of the gaas crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and as/ga flux beam equivalent pressures(beps). it has been shown by atomic force microscope (afm) measurements that gaas single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 c to 300 c under as flux (bep) of about 1.0 x 10(-6) torr. the diameter of gaas rings is about 30-50 nm and thickness several nm. |
| 英文摘要 | fabrication of semiconductor nanostructures such as quantum dots (qds), quantum rings (qrs) has been considered as the important step for realization of solid state quantum information devices, including qds single photon emission source, qrs single electron memory unit, etc. to fabricate gaas quantum rings, we use molecular beam epitaxy (mbe) droplet technique in this report. in this droplet technique, gallium (ga) molecular beams are supplied initially without arsenic (as) ambience, forming droplet-like nano-clusters of ga atoms on the substrate, then the arsenic beams are supplied to crystallize the ga droplets into gaas crystals. because the morphologies and dimensions of the gaas crystal are governed by the interplay between the surface migration of ga and as adatoms and their crystallization, the shape of the gaas crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and as/ga flux beam equivalent pressures(beps). it has been shown by atomic force microscope (afm) measurements that gaas single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 c to 300 c under as flux (bep) of about 1.0 x 10(-6) torr. the diameter of gaas rings is about 30-50 nm and thickness several nm.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:06z (gmt). no. of bitstreams: 1 2249.pdf: 1038226 bytes, checksum: 8f8d6bf158bb1f036775fc1017f359da (md5) previous issue date: 2007; natl ctr nanosci & technol.; natl steering comm nanotechnol.; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | natl ctr nanosci & technol.; natl steering comm nanotechnol. |
| 会议录 | nanoscience and technology丛书标题: solid state phenomena
 |
| 会议录出版者 | trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 学科主题 | 半导体物理 |
| 会议录出版地 | laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 语种 | 英语 |
| ISSN号 | 1012-0394 |
| ISBN号 | 978-3-908451-30-3 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9796]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang, SS ,Niu, ZC ,Xia, JB . Self-assembled GaAs quantum rings by MBE droplet epitaxy[C]. 见:china international conference on nanoscience and technology (chinanano 2005). beijing, peoples r china. jun 09-11, 2005. |
入库方式： OAI收割
来源：半导体研究所
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