Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering
文献类型:期刊论文
作者 | Song, Junqiang; Chen, Xihong; Tang, Yunshan; Yao, Qin; Chen, Lidong |
刊名 | JOURNAL OF ELECTRONIC MATERIALS |
出版日期 | 2012-11-01 |
卷号 | 41期号:11页码:3068-3072 |
关键词 | Thermoelectric bismuth telluride sputtering thin film post-annealing |
其他题名 | Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering |
通讯作者 | Chen, LD |
英文摘要 | p-Type Bi0.45Sb1.55Te3 thermoelectric (TE) thin films have been prepared at room temperature by a magnetron cosputtering process. The effect of postannealing on the microstructure and TE properties of Bi0.45Sb1.55Te3 films has been investigated in the temperature range from room temperature to 350A degrees C. x-Ray diffraction analysis shows that the annealed films have polycrystalline rhombohedral crystal structure, and the average grain size increases from 36 nm to 64 nm with increasing annealing temperature from room temperature to 350A degrees C. Electron probe microanalysis shows that annealing above 250A degrees C can cause Te reevaporation, which induces porous thin films and dramatically affects electrical transport properties of the thin films. TE properties of the films have been investigated at room temperature. The hole concentration shows a trend from descent to ascent and has a minimum value at the annealing temperature of 200A degrees C, while the Seebeck coefficient shows an opposite trend and a maximum value of 245 mu V K-1. The electrical resistivity monotonically decreases from 19.8 m Omega cm to 1.4 m Omega cm with increasing annealing temperature. Correspondingly, a maximum value of power factor, 27.4 mu W K-2 cm(-1), was obtained at the annealing temperature of 250A degrees C. |
学科主题 | 无机非金属材料 |
WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
类目[WOS] | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied |
研究领域[WOS] | Engineering ; Materials Science ; Physics |
关键词[WOS] | FLASH EVAPORATION METHOD ; ANTISITE DEFECTS ; BULK ALLOYS ; FABRICATION ; PERFORMANCE ; DEVICES ; MERIT |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000309677200014 |
公开日期 | 2013-07-19 |
源URL | [http://ir.sic.ac.cn/handle/331005/3562] |
专题 | 上海硅酸盐研究所_能量转换材料重点实验室_期刊论文 |
作者单位 | Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China |
推荐引用方式 GB/T 7714 | Song, Junqiang,Chen, Xihong,Tang, Yunshan,et al. Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering[J]. JOURNAL OF ELECTRONIC MATERIALS,2012,41(11):3068-3072. |
APA | Song, Junqiang,Chen, Xihong,Tang, Yunshan,Yao, Qin,&Chen, Lidong.(2012).Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering.JOURNAL OF ELECTRONIC MATERIALS,41(11),3068-3072. |
MLA | Song, Junqiang,et al."Post-annealing Effect on Microstructures and Thermoelectric Properties of Bi0.45Sb1.55Te3 Thin Films Deposited by Co-sputtering".JOURNAL OF ELECTRONIC MATERIALS 41.11(2012):3068-3072. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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