Terahertz pulse generation with LT-GaAs photoconductive antenna
文献类型：会议论文
| 作者 | Cui, LJ (Cui, L. J.) ; Zeng, YP (Zeng, Y. P.) ; Zhao, GZ (Zhao, G. Z.) |
| 出版日期 | 2006 |
| 会议名称 | joint 31st international conference on infrared and millimeter waves/14th international conference on terahertz electronics |
| 会议日期 | sep 18-22, 2006 |
| 会议地点 | shanghai, peoples r china |
| 关键词 | TEMPERATURE-GROWN GAAS CARRIER DYNAMICS EMISSION |
| 页码 | 143-143 |
| 通讯作者 | cui, lj, chinese acad med sci, inst semicond, novel mat lab, beijing 100083, peoples r china. |
| 中文摘要 | low-temperature-grown gaas (lt-gaas) of 1-um thickness was grown at 250 degrees c on semi-insulating gaas (001) substrate using epi gen-ii solid-source mbe system. the sample was then in situ annealed for 10 min at 600 degrees c under as-rich condition. thz emitters were fabricated on this ltgaas with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. the spectral bandwidth of 2.75 thz was obtaind with time domain spectroscopy. it is found that thz emission efficiency is increased with decreasing antenna gap. two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy. |
| 英文摘要 | low-temperature-grown gaas (lt-gaas) of 1-um thickness was grown at 250 degrees c on semi-insulating gaas (001) substrate using epi gen-ii solid-source mbe system. the sample was then in situ annealed for 10 min at 600 degrees c under as-rich condition. thz emitters were fabricated on this ltgaas with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. the spectral bandwidth of 2.75 thz was obtaind with time domain spectroscopy. it is found that thz emission efficiency is increased with decreasing antenna gap. two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:07z (gmt). no. of bitstreams: 1 2254.pdf: 1044082 bytes, checksum: d5aacb8b0875b76e93187f3791a558b8 (md5) previous issue date: 2006; chinese acad sci, shanghai inst tech phys.; se univ.; chinese acad sci.; natl nat sci fdn china.; ieee mtt s.; ieee nanjing joint chapter.; ieee shanghai sub sect.; shanghai int culture assoc.; chinese phys soc.; chinese opt soc.; chinese inst elect.; chinese acad med sci, inst semicond, novel mat lab, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | chinese acad sci, shanghai inst tech phys.; se univ.; chinese acad sci.; natl nat sci fdn china.; ieee mtt s.; ieee nanjing joint chapter.; ieee shanghai sub sect.; shanghai int culture assoc.; chinese phys soc.; chinese opt soc.; chinese inst elect. |
| 会议录 | conference digest of the 2006 joint 31st international conference on infrared and millimeter waves and 14th international conference on terahertz electronics
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-0399-8 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9806]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cui, LJ ,Zeng, YP ,Zhao, GZ . Terahertz pulse generation with LT-GaAs photoconductive antenna[C]. 见:joint 31st international conference on infrared and millimeter waves/14th international conference on terahertz electronics. shanghai, peoples r china. sep 18-22, 2006. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。