Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
文献类型：会议论文
| 作者 | Zeng, YX (Zeng, Yuxin) ; Liu, W (Liu, Wei) ; Yang, FH (Yang, Fuhua) ; Xu, P (Xu, Ping) ; Tan, PH (Tan, Pingheng) ; Zheng, HZ (Zheng, Houzhi) ; Zeng, YP (Zeng, Yiping) ; Xing, YJ (Xing, Yingjie) ; Yu, DP (Yu, Dapeng) |
| 出版日期 | 2006 |
| 会议名称 | 2nd asian conference on nanoscience and nanotechnology |
| 会议日期 | nov 24-27, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | InAs quantum dot photoluminescence modulation-doped field effect transistor MU-M CAPPING LAYER |
| 页码 | vol 5 no 6 5 (6): 721-727 |
| 通讯作者 | zeng, yx, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | self-assembled inas qd dot-in-a-well (dwell) structures were grown on gaas substrate by mbe system, and heterojunction modulation-doped field effect transistor (modfet) was fabricated. the optical properties of the samples show that the photoluminescence of inas/gaas self-assembled quantum dot (saqd) is at 1.265 mu m at 300 k. the temperature-dependence of the abnormal redshift of inas saqd wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the inas quantum dot. according to the electrical measurement, high electric field current-voltage characteristic of the modfet device were obtained. the embedded inas qd of the samples can be regard as scattering centers to the vicinity of the channel electrons. the transport property of the electrons in gaas channel will be modulated by the qd due to the coulomb interaction. it has been proposed that a modfet embedded with inas qds presents a novel type of field effect photon detector. |
| 英文摘要 | self-assembled inas qd dot-in-a-well (dwell) structures were grown on gaas substrate by mbe system, and heterojunction modulation-doped field effect transistor (modfet) was fabricated. the optical properties of the samples show that the photoluminescence of inas/gaas self-assembled quantum dot (saqd) is at 1.265 mu m at 300 k. the temperature-dependence of the abnormal redshift of inas saqd wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the inas quantum dot. according to the electrical measurement, high electric field current-voltage characteristic of the modfet device were obtained. the embedded inas qd of the samples can be regard as scattering centers to the vicinity of the channel electrons. the transport property of the electrons in gaas channel will be modulated by the qd due to the coulomb interaction. it has been proposed that a modfet embedded with inas qds presents a novel type of field effect photon detector.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:08z (gmt). no. of bitstreams: 1 2257.pdf: 575220 bytes, checksum: 42a7a8e81003341afef2abd381c3b829 (md5) previous issue date: 2006; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | international journal of nanoscience丛书标题: international journal of nanoscience series
 |
| 会议录出版者 | world scientific publ co pte ltd ; po box 128 farrer rd, singapore 9128, singapore |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 128 farrer rd, singapore 9128, singapore |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9812]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zeng, YX ,Liu, W ,Yang, FH ,et al. Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors[C]. 见:2nd asian conference on nanoscience and nanotechnology. beijing, peoples r china. nov 24-27, 2004. |
入库方式： OAI收割
来源：半导体研究所
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