Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
文献类型:会议论文
作者 | Miao, ZH (Miao, Zhenhua) ; Gong, Z (Gong, Zheng) ; Fang, ZD (Fang, Zhidan) ; Niu, ZC (Niu, Zhichuan) |
出版日期 | 2006 |
会议名称 | 2nd asian conference on nanoscience and nanotechnology |
会议日期 | nov 24-27, 2004 |
会议地点 | beijing, peoples r china |
关键词 | atomic hydrogen molecular beam epitaxy step arrays MOLECULAR-BEAM EPITAXY ATOMIC-HYDROGEN VICINAL SURFACE QUANTUM DOTS GROWTH TEMPERATURE IRRADIATION MECHANISM MBE |
页码 | vol 5 no 6 5 (6): 757-762 |
通讯作者 | gong, z, chinese acad sci, inst semicond, natl lab superlattice & microstruct, po box 912, beijing 100083, peoples r china. |
中文摘要 | morphology evolution of high-index (331)a surfaces during molecular beam epitaxy (mbe) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. atomic force microscope (afm) measurements have shown that the step height and terrace width of gaas layers increase monotonically with increasing substrate temperature in conventional mbe. however, this situation is reversed in atomic hydrogen-assisted mbe, indicating that step bunching is partly suppressed. we attribute this to the reduced surface migration length of ga adatoms with atomic hydrogen. by using the step arrays formed on gaas (331)a surfaces as the templates, we fabricated laterally ordered ingaas self-aligned nanowires. |
英文摘要 | morphology evolution of high-index (331)a surfaces during molecular beam epitaxy (mbe) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. atomic force microscope (afm) measurements have shown that the step height and terrace width of gaas layers increase monotonically with increasing substrate temperature in conventional mbe. however, this situation is reversed in atomic hydrogen-assisted mbe, indicating that step bunching is partly suppressed. we attribute this to the reduced surface migration length of ga adatoms with atomic hydrogen. by using the step arrays formed on gaas (331)a surfaces as the templates, we fabricated laterally ordered ingaas self-aligned nanowires.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:08z (gmt). no. of bitstreams: 1 2259.pdf: 387843 bytes, checksum: 5b40bb3d7b021d2c8da7788f9e8f441e (md5) previous issue date: 2006; chinese acad sci, inst semicond, natl lab superlattice & microstruct, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议录 | international journal of nanoscience丛书标题: international journal of nanoscience series
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会议录出版者 | world scientific publ co pte ltd ; po box 128 farrer rd, singapore 9128, singapore |
学科主题 | 半导体物理 |
会议录出版地 | po box 128 farrer rd, singapore 9128, singapore |
语种 | 英语 |
源URL | [http://ir.semi.ac.cn/handle/172111/9816] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Miao, ZH ,Gong, Z ,Fang, ZD ,et al. Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires[C]. 见:2nd asian conference on nanoscience and nanotechnology. beijing, peoples r china. nov 24-27, 2004. |
入库方式: OAI收割
来源:半导体研究所
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