中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires

文献类型:会议论文

作者Miao, ZH (Miao, Zhenhua) ; Gong, Z (Gong, Zheng) ; Fang, ZD (Fang, Zhidan) ; Niu, ZC (Niu, Zhichuan)
出版日期2006
会议名称2nd asian conference on nanoscience and nanotechnology
会议日期nov 24-27, 2004
会议地点beijing, peoples r china
关键词atomic hydrogen molecular beam epitaxy step arrays MOLECULAR-BEAM EPITAXY ATOMIC-HYDROGEN VICINAL SURFACE QUANTUM DOTS GROWTH TEMPERATURE IRRADIATION MECHANISM MBE
页码vol 5 no 6 5 (6): 757-762
通讯作者gong, z, chinese acad sci, inst semicond, natl lab superlattice & microstruct, po box 912, beijing 100083, peoples r china.
中文摘要morphology evolution of high-index (331)a surfaces during molecular beam epitaxy (mbe) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. atomic force microscope (afm) measurements have shown that the step height and terrace width of gaas layers increase monotonically with increasing substrate temperature in conventional mbe. however, this situation is reversed in atomic hydrogen-assisted mbe, indicating that step bunching is partly suppressed. we attribute this to the reduced surface migration length of ga adatoms with atomic hydrogen. by using the step arrays formed on gaas (331)a surfaces as the templates, we fabricated laterally ordered ingaas self-aligned nanowires.
英文摘要morphology evolution of high-index (331)a surfaces during molecular beam epitaxy (mbe) growth have been investigated in order to uncover their unique physic properties and fabricate spatially ordered low dimensional nanostructures. atomic force microscope (afm) measurements have shown that the step height and terrace width of gaas layers increase monotonically with increasing substrate temperature in conventional mbe. however, this situation is reversed in atomic hydrogen-assisted mbe, indicating that step bunching is partly suppressed. we attribute this to the reduced surface migration length of ga adatoms with atomic hydrogen. by using the step arrays formed on gaas (331)a surfaces as the templates, we fabricated laterally ordered ingaas self-aligned nanowires.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:08z (gmt). no. of bitstreams: 1 2259.pdf: 387843 bytes, checksum: 5b40bb3d7b021d2c8da7788f9e8f441e (md5) previous issue date: 2006; chinese acad sci, inst semicond, natl lab superlattice & microstruct, beijing 100083, peoples r china
收录类别CPCI-S
会议录international journal of nanoscience丛书标题: international journal of nanoscience series
会议录出版者world scientific publ co pte ltd ; po box 128 farrer rd, singapore 9128, singapore
学科主题半导体物理
会议录出版地po box 128 farrer rd, singapore 9128, singapore
语种英语
源URL[http://ir.semi.ac.cn/handle/172111/9816]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Miao, ZH ,Gong, Z ,Fang, ZD ,et al. Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires[C]. 见:2nd asian conference on nanoscience and nanotechnology. beijing, peoples r china. nov 24-27, 2004.

入库方式: OAI收割

来源:半导体研究所

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