Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
文献类型：会议论文
| 作者 | Fang, ZD (Fang, Zhidan) ; Gong, M (Gong, Meng) ; Miao, ZH (Miao, Zhenhua) ; Niu, ZC (Niu, Zhichuan) |
| 出版日期 | 2006 |
| 会议名称 | 2nd asian conference on nanoscience and nanotechnology |
| 会议日期 | nov 24-27, 2004 |
| 会议地点 | beijing, peoples r china |
| 关键词 | quantum dots photoluminescence combination layer 1.3 MU-M LASERS INALAS |
| 页码 | vol 5 no 6 5 (6): 847-852 |
| 通讯作者 | fang, zd, chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | we investigate about controlling of photoluminescence (pl) wavelengths of inas/gaas self-assembled quantum dots (qds) sandwiched with combination strained-buffer layer (csbl) and combination strained-reducing layer (csrl). the emission peak position of qds is red-shifted to 1.37 mu m. the density of the qds is increased to 1.17x10(10) cm(-2). it is indicated that optical properties of qds could be improved by optimizing of the buffer and covering layers for the qds. these results may provide a new way to further developing gaas-based 1.3 mu m light sources. |
| 英文摘要 | we investigate about controlling of photoluminescence (pl) wavelengths of inas/gaas self-assembled quantum dots (qds) sandwiched with combination strained-buffer layer (csbl) and combination strained-reducing layer (csrl). the emission peak position of qds is red-shifted to 1.37 mu m. the density of the qds is increased to 1.17x10(10) cm(-2). it is indicated that optical properties of qds could be improved by optimizing of the buffer and covering layers for the qds. these results may provide a new way to further developing gaas-based 1.3 mu m light sources.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:08z (gmt). no. of bitstreams: 1 2260.pdf: 442237 bytes, checksum: add96ef60832b923713575b50a4b8484 (md5) previous issue date: 2006; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | international journal of nanoscience丛书标题: international journal of nanoscience series
 |
| 会议录出版者 | world scientific publ co pte ltd ; po box 128 farrer rd, singapore 9128, singapore |
| 学科主题 | 半导体物理 |
| 会议录出版地 | po box 128 farrer rd, singapore 9128, singapore |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9818]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fang, ZD ,Gong, M ,Miao, ZH ,et al. Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers[C]. 见:2nd asian conference on nanoscience and nanotechnology. beijing, peoples r china. nov 24-27, 2004. |
入库方式： OAI收割
来源：半导体研究所
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