Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers
文献类型：会议论文
| 作者 | Liu, XF (Liu, X. F.) ; Sun, GS (Sun, G. S.) ; Li, JM (Li, J. M.) ; Ning, J (Ning, J.) ; Zhao, YM (Zhao, Y. M.) ; Luo, MC (Luo, M. C.) ; Wang, L (Wang, L.) ; Zhao, WS (Zhao, W. S.) ; Zeng, YP (Zeng, Y. P.) |
| 出版日期 | 2007 |
| 会议名称 | 33rd international symposium on compound semiconductors |
| 会议日期 | aug 13-17, 2006 |
| 会议地点 | vancouver, canada |
| 关键词 | AVALANCHE PHOTODIODES AREA |
| 页码 | vol 4 no 5 4 (5): 1609-1612 |
| 通讯作者 | liu, xf, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. |
| 中文摘要 | vertical pin ultraviolet photodetectors based on 4h-sic homoepilayers are presented. the growth of the 4h-sic homoepilayers was carried out in a lpcvd system. the size of the active area of the photodetector was 300 x 300 mu m(2). the dark and illuminated i-v characteristics were measured at reverse biases from 0 v to 30 v at room temperature. the illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 v. the photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. the calculated spectral detectivity d* was shown to be higher than 10(13) cmhz(1/2)/w from 260 to 360 nm with a peak value of 5.9 x 10(13) cmhz(1/2) /w at 310 nm. the peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 wiley-vch verlag gmbh & co. kgaa, weinheim. |
| 英文摘要 | vertical pin ultraviolet photodetectors based on 4h-sic homoepilayers are presented. the growth of the 4h-sic homoepilayers was carried out in a lpcvd system. the size of the active area of the photodetector was 300 x 300 mu m(2). the dark and illuminated i-v characteristics were measured at reverse biases from 0 v to 30 v at room temperature. the illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 v. the photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. the calculated spectral detectivity d* was shown to be higher than 10(13) cmhz(1/2)/w from 260 to 360 nm with a peak value of 5.9 x 10(13) cmhz(1/2) /w at 310 nm. the peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 wiley-vch verlag gmbh & co. kgaa, weinheim.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:08z (gmt). no. of bitstreams: 1 2262.pdf: 214174 bytes, checksum: 93274a0b30b7c4a0f56e1ece5a56f514 (md5) previous issue date: 2007; chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | physica status solidi c - current topics in solid state physics丛书标题: physica status solidi c-current topics in solid state physics
 |
| 会议录出版者 | wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany |
| 学科主题 | 半导体材料 |
| 会议录出版地 | pappelallee 3, w-69469 weinheim, germany |
| 语种 | 英语 |
| ISSN号 | 1610-1634 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9822]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, XF ,Sun, GS ,Li, JM ,et al. Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers[C]. 见:33rd international symposium on compound semiconductors. vancouver, canada. aug 13-17, 2006. |
入库方式： OAI收割
来源：半导体研究所
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