A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication
文献类型：会议论文
| 作者 | Huang BJ (Huang Beiju) ; Zhang X (Zhang Xu) ; Liu HJ (Liu Haijun) ; Liu JB (Liu, Jinbin) ; Dai XG (Dai Xiaoguang) ; Zhang Y (Zhang Yu) ; Chen HD (Chen Hongda) |
| 出版日期 | 2007 |
| 会议名称 | international workshop on electron devices and semiconductor technology |
| 会议日期 | jun 03-04, 2007 |
| 会议地点 | beijing, peoples r china |
| 关键词 | complementary metal-oxide-semiconductor (CMOS) |
| 页码 | 198-201 |
| 通讯作者 | huang, bj, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 中文摘要 | a monolithic silicon cmos optoelectronic integrated circuit (oeic) was designed and fabricated with standard 0.6 mu m cmos technology. this oeic circuit consisted of an integrated double photodiode detector (dpd) and a preamplifier. the dpd detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. the preamplifier exploited the regulated cascode (rgc) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. testing results showed that the bandwidth of oeic was 700mhz, indicating the bit rate of 1gb/s was achieved. |
| 英文摘要 | a monolithic silicon cmos optoelectronic integrated circuit (oeic) was designed and fabricated with standard 0.6 mu m cmos technology. this oeic circuit consisted of an integrated double photodiode detector (dpd) and a preamplifier. the dpd detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. the preamplifier exploited the regulated cascode (rgc) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. testing results showed that the bandwidth of oeic was 700mhz, indicating the bit rate of 1gb/s was achieved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; ieee electron devices soc. tsinghua univ; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 收录类别 | 其他 |
| 会议主办者 | ieee electron devices soc. tsinghua univ |
| 会议录 | 2007 international workshop on electron devices and semiconductor technology
 |
| 会议录出版者 | ieee ; 345 e 47th st, new york, ny 10017 usa |
| 学科主题 | 光电子学 |
| 会议录出版地 | 345 e 47th st, new york, ny 10017 usa |
| 语种 | 英语 |
| ISBN号 | 978-1-4244-1097-2 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9830]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang BJ ,Zhang X ,Liu HJ ,et al. A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication[C]. 见:international workshop on electron devices and semiconductor technology. beijing, peoples r china. jun 03-04, 2007. |
入库方式： OAI收割
来源：半导体研究所
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