Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
文献类型：会议论文
| 作者 | Liu, XF (Liu, X. F.) ; Sun, GS (Sun, G. S.) ; Zhao, YM (Zhao, Y. M.) ; Ning, J (Ning, J.) ; Li, JY (Li, J. Y.) ; Wang, L (Wang, L.) ; Zhao, WS (Zhao, W. S.) ; Luo, MC (Luo, M. C.) ; Li, JM (Li, J. M.) |
| 出版日期 | 2007 |
| 会议名称 | 6th european conference on silicon carbide and related materials |
| 会议日期 | sep, 2006 |
| 会议地点 | newcastle upon tyne, england |
| 关键词 | homoepitaxy 4H-SiC multi-epilayer UV detection p(+)-pi-n(-) ULTRAVIOLET PHOTODETECTOR EPITAXIAL-GROWTH |
| 页码 | 556-557: 109-112 |
| 通讯作者 | liu, xf, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. |
| 中文摘要 | homoepitaxial growth of 4h-sic p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the lpcvd system with sih4+c2h4+h-2. the surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by nomarski, afm, raman and sims, respectively. afm and raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the sims analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. the uv photodetectors fabricated on 4h-sic p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the uv range. |
| 英文摘要 | homoepitaxial growth of 4h-sic p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the lpcvd system with sih4+c2h4+h-2. the surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by nomarski, afm, raman and sims, respectively. afm and raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the sims analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. the uv photodetectors fabricated on 4h-sic p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the uv range.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:10z (gmt). no. of bitstreams: 1 2277.pdf: 929990 bytes, checksum: 64817ca1ff8bafa09a88ba2895bd734e (md5) previous issue date: 2007; ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc.; chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc. |
| 会议录 | silicon carbide and related materials 2006丛书标题: materials science forum
 |
| 会议录出版者 | trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 语种 | 英语 |
| ISSN号 | 0255-5476 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9852]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, XF ,Sun, GS ,Zhao, YM ,et al. Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection[C]. 见:6th european conference on silicon carbide and related materials. newcastle upon tyne, england. sep, 2006. |
入库方式： OAI收割
来源：半导体研究所
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