Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications
文献类型：会议论文
| 作者 | Sun, G (Sun, Guosheng) ; Ning, J (Ning, Jin) ; Liu, X (Liu, Xingfang) ; Zhao, Y (Zhao, Yongmei) ; Li, J (Li, Jiaye) ; Wang, L (Wang, Lei) ; Zhao, W (Zhao, Wanshun) ; Wang, L (Wang, Liang) |
| 出版日期 | 2007 |
| 会议名称 | 6th european conference on silicon carbide and related materials |
| 会议日期 | sep, 2006 |
| 会议地点 | newcastle upon tyne, england |
| 关键词 | polycrystalline 3C-SiC resonator doping SILICON-CARBIDE |
| 页码 | 556-557: 179-182 |
| 通讯作者 | sun, g, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | 3c-sic is a promising material for the development of microelectromechanical systems (mems) applications in harsh environments. this paper presents the lpcvd growth of heavily nitrogen doped polycrystalline 3c-sic films on si wafers with 2.0 mu m-thick silicon dioxide (sio2) films for resonator applications. the growth has been performed via chemical vapor deposition using sih4 and c2h4 precursor gases with carrier gas of h-2 in a newly developed vertical cvd chamber. nh3 was used as n-type dopant. 3c-sic films were characterized by scanning electron microscopy (sem), x-ray diffraction (xrd), x-ray photoelectron spectroscopy (xps), secondary ion mass spectroscopy (sims), and room temperature hall effect measurements. it was shown that there is no voids at the interface between 3c-sic and sio2. undoped 3c-sic films show n-type conduction with resisitivity, hall mobility, and carrier concentration at room temperature of about 0.56 omega center dot cm, 54 cm(2)/vs, and 2.0x 10(17) cm(-3), respectively. the heavily nitrogen doped polycrystalline 3c-sic with the resisitivity of less than 10(-3) omega center dot cm was obtained by in-situ doping. polycrystalline sic resonators have been fabricated preliminarily on these heavily doped sic films with thickness of about 2 mu m. resonant frequency of 49.1 khz was obtained under atmospheric pressure. |
| 英文摘要 | 3c-sic is a promising material for the development of microelectromechanical systems (mems) applications in harsh environments. this paper presents the lpcvd growth of heavily nitrogen doped polycrystalline 3c-sic films on si wafers with 2.0 mu m-thick silicon dioxide (sio2) films for resonator applications. the growth has been performed via chemical vapor deposition using sih4 and c2h4 precursor gases with carrier gas of h-2 in a newly developed vertical cvd chamber. nh3 was used as n-type dopant. 3c-sic films were characterized by scanning electron microscopy (sem), x-ray diffraction (xrd), x-ray photoelectron spectroscopy (xps), secondary ion mass spectroscopy (sims), and room temperature hall effect measurements. it was shown that there is no voids at the interface between 3c-sic and sio2. undoped 3c-sic films show n-type conduction with resisitivity, hall mobility, and carrier concentration at room temperature of about 0.56 omega center dot cm, 54 cm(2)/vs, and 2.0x 10(17) cm(-3), respectively. the heavily nitrogen doped polycrystalline 3c-sic with the resisitivity of less than 10(-3) omega center dot cm was obtained by in-situ doping. polycrystalline sic resonators have been fabricated preliminarily on these heavily doped sic films with thickness of about 2 mu m. resonant frequency of 49.1 khz was obtained under atmospheric pressure.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:10z (gmt). no. of bitstreams: 1 2278.pdf: 1016692 bytes, checksum: 9fb366681f7969c266862c7f73f73985 (md5) previous issue date: 2007; ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc.; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc. |
| 会议录 | silicon carbide and related materials 2006丛书标题: materials science forum
 |
| 会议录出版者 | trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 学科主题 | 光电子学 |
| 会议录出版地 | laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 语种 | 英语 |
| ISSN号 | 0255-5476 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9854]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, G ,Ning, J ,Liu, X ,et al. Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications[C]. 见:6th european conference on silicon carbide and related materials. newcastle upon tyne, england. sep, 2006. |
入库方式： OAI收割
来源：半导体研究所
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