Micro-raman investigation of defects in a 4H-SiC homoepilayer
文献类型：会议论文
| 作者 | Liu, XF (Liu, X. F.) ; Sun, GS (Sun, G. S.) ; Li, JM (Li, J. M.) ; Zhao, YM (Zhao, Y. M.) ; Li, JY (Li, J. Y.) ; Wang, L (Wang, L.) ; Zhao, WS (Zhao, W. S.) ; Luo, MC (Luo, M. C.) ; Zeng, YP (Zeng, Y. P.) |
| 出版日期 | 2007 |
| 会议名称 | 6th european conference on silicon carbide and related materials |
| 会议日期 | sep, 2006 |
| 会议地点 | newcastle upon tyne, england |
| 关键词 | micro-raman 4H-SiC defects 3C-inclusions triangle-shaped inclusion EPITAXIAL LAYERS SILICON-CARBIDE |
| 页码 | 556-557: 387-390 |
| 通讯作者 | liu, xf, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. |
| 中文摘要 | three types of defects, namely defect i, defect 11, defect 111, in the 4h-sic homoepilayer were investigated by micro-raman scattering measurement. these defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. it was found that there are 3c-sic inclusions in the cores of defect 11 and defect iii and the shape of inclusion determines the type of defect ii or defect iii. if the core contains a triangle-shaped inclusion, the defect iii would be formed; otherwise, the defect 11 was formed. no inclusion was observed in the core of the defect i. the mechanisms of these defects are discussed. |
| 英文摘要 | three types of defects, namely defect i, defect 11, defect 111, in the 4h-sic homoepilayer were investigated by micro-raman scattering measurement. these defects all originate from a certain core and are composed of (1) a wavy tail region, (11) two long tails, the so called comet and (111) three plaits. it was found that there are 3c-sic inclusions in the cores of defect 11 and defect iii and the shape of inclusion determines the type of defect ii or defect iii. if the core contains a triangle-shaped inclusion, the defect iii would be formed; otherwise, the defect 11 was formed. no inclusion was observed in the core of the defect i. the mechanisms of these defects are discussed.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:11z (gmt). no. of bitstreams: 1 2279.pdf: 1350402 bytes, checksum: 9ad8f392d2c09156a5add8749e06bb21 (md5) previous issue date: 2007; ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc.; chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议主办者 | ii vi inc.; iii vs review.; cree inc.; compound semicond.; dow corning compound semicond solut.; lpe.; norstel ab.; semisouth.; siced.; sicrystal.; surface technol syst plc. |
| 会议录 | silicon carbide and related materials 2006丛书标题: materials science forum
 |
| 会议录出版者 | trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 学科主题 | 半导体材料 |
| 会议录出版地 | laublsrutistr 24, ch-8717 stafa-zurich, switzerland |
| 语种 | 英语 |
| ISSN号 | 0255-5476 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9856]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, XF ,Sun, GS ,Li, JM ,et al. Micro-raman investigation of defects in a 4H-SiC homoepilayer[C]. 见:6th european conference on silicon carbide and related materials. newcastle upon tyne, england. sep, 2006. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。