Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD
文献类型：会议论文
| 作者 | Wang, XL ; Wang, CM ; Hu, GX ; Wang, JX ; Li, JP |
| 出版日期 | 2006 |
| 会议名称 | 32nd international symposium on compound semiconductors |
| 会议日期 | sep 18-22, 2005 |
| 会议地点 | rust, germany |
| 关键词 | MOLECULAR-BEAM EPITAXY 2-DIMENSIONAL ELECTRON-GAS BULK GAN OPTIMIZATION LAYERS HEMTS |
| 页码 | vol 3 no 3 3 (3): 607-610 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | al0.3ga0.7n/aln/gan hemt structures with significantly high mobility have been grown by metalorganic chemical vapor deposition (mocvd) on sapphire substrates. at room temperature (rt) a hall mobility of 2104 cm(2)/vs and a two-dimensional electron gas (2deg) density of 1.1x10(13) cm(-2) are achieved, corresponding to a sheet resistance of 277.8 omega/sq. the elimination of v-shaped defects were observed on al0.3ga0.7n/aln/gan hemt structures and correlated with the increase of 2deg mobility. (c) 2006 wiley-vch verlag gmbh & co kgaa, weinheim. |
| 英文摘要 | al0.3ga0.7n/aln/gan hemt structures with significantly high mobility have been grown by metalorganic chemical vapor deposition (mocvd) on sapphire substrates. at room temperature (rt) a hall mobility of 2104 cm(2)/vs and a two-dimensional electron gas (2deg) density of 1.1x10(13) cm(-2) are achieved, corresponding to a sheet resistance of 277.8 omega/sq. the elimination of v-shaped defects were observed on al0.3ga0.7n/aln/gan hemt structures and correlated with the increase of 2deg mobility. (c) 2006 wiley-vch verlag gmbh & co kgaa, weinheim.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:13z (gmt). no. of bitstreams: 1 2317.pdf: 272460 bytes, checksum: 83a57e129ff03aa9494156df7d57af6c (md5) previous issue date: 2006; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | physica status solidi c - current topics in solid state physics丛书标题: physica status solidi c-current topics in solid state physics
 |
| 会议录出版者 | wiley-vch, inc ; 605 third ave, new york, ny 10158-0012 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 605 third ave, new york, ny 10158-0012 usa |
| 语种 | 英语 |
| ISSN号 | 1610-1634 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9870]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, XL,Wang, CM,Hu, GX,et al. Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD[C]. 见:32nd international symposium on compound semiconductors. rust, germany. sep 18-22, 2005. |
入库方式： OAI收割
来源：半导体研究所
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