Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
文献类型：会议论文
| 作者 | Wang, CM ; Wang, XL ; Hu, GX ; Wang, JX ; Li, JP |
| 出版日期 | 2006 |
| 会议名称 | 32nd international symposium on compound semiconductors |
| 会议日期 | sep 18-22, 2005 |
| 会议地点 | rust, germany |
| 关键词 | HIGH BREAKDOWN VOLTAGE MOBILITY TRANSISTORS HETEROSTRUCTURES SAPPHIRE GANHEMTS |
| 页码 | vol 3 no 3 3 (3): 486-489 |
| 通讯作者 | wang, cm, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | improved electrical properties of alxga1-xn/gan high electron mobility transistor (hemt) structures grown by metalorganic chemical vapor deposition (mocvd) were achieved through increasing the al mole fraction in the algan barrier layers. an average sheet resistance of 326.6 omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch al0.38ga0 62n/gan hemt structure. the surface morphology of alxga1-xn/gan hemt structures strongly correlates with the al content. more defects were formed with increasing al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 wiley-vch verlag gmbh & co kgaa, weinheim. |
| 英文摘要 | improved electrical properties of alxga1-xn/gan high electron mobility transistor (hemt) structures grown by metalorganic chemical vapor deposition (mocvd) were achieved through increasing the al mole fraction in the algan barrier layers. an average sheet resistance of 326.6 omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch al0.38ga0 62n/gan hemt structure. the surface morphology of alxga1-xn/gan hemt structures strongly correlates with the al content. more defects were formed with increasing al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 wiley-vch verlag gmbh & co kgaa, weinheim.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:13z (gmt). no. of bitstreams: 1 2318.pdf: 343592 bytes, checksum: 52c3ccd37fe5bd6e4841c62eebd24033 (md5) previous issue date: 2006; chinese acad sci, inst semicond, beijing 100083, peoples r china |
| 收录类别 | CPCI-S |
| 会议录 | physica status solidi c - current topics in solid state physics丛书标题: physica status solidi c-current topics in solid state physics
 |
| 会议录出版者 | wiley-vch, inc ; 605 third ave, new york, ny 10158-0012 usa |
| 学科主题 | 半导体材料 |
| 会议录出版地 | 605 third ave, new york, ny 10158-0012 usa |
| 语种 | 英语 |
| ISSN号 | 1610-1634 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9872]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, CM,Wang, XL,Hu, GX,et al. Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures[C]. 见:32nd international symposium on compound semiconductors. rust, germany. sep 18-22, 2005. |
入库方式： OAI收割
来源：半导体研究所
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